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EP0089836A2
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Static-type semiconductor memory device
Assignee: Fujitsu Ltd
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Filing: 1983-03-18
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Granted: —
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Expires: 2003-03-18
Abstract
Abstract A static-type semiconductor memory device includes peripheral circuits (20, 21), provided with at least a decoder, and memory cells (25). A high-voltage generating unit is provided in the chip so that a first power-source voltage (V cc ) supplied from an external unit is boosted to a second power source voltage level (V cc ) higher than said first power source voltage level. The first power-source voltage is supplied to the peripheral circuits and the second power-source voltage is supplied to the memory cells, thereby improving their stability in the presence of disturbances such as a-rays.
Inventors
- 👤 Keizo Aoyama
- 👤 Takahiko Yamauchi
- 👤 Teruo Seki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 20:48
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/413; G11C11/417; G11C5/00; G11C5/14; G11C5/145
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
79 words
A static-type semiconductor memory device comprising peripheral circuits, provided with at least a decoder, memory cells, a first power-source voltage supplied from an external unit, and a high-voltage generating unit provided in the chip to boost said first power-source voltage to a second power-source voltage level higher than said first power-source voltage level, wherein the power source for the peripheral circuits utilizes said first power-source voltage, and the power source for the memory cells utilizes said second power-source voltage.
Claim 2
Dependent Claim
79 words
A static-type semiconductor memory device comprising peripheral circuits, provided with at least a decoder, memory cells, a first power-source voltage supplied from an external unit, and a high-voltage generating unit provided in the chip to boost said first power-source voltage to a second power-source voltage level higher than said first power-source voltage level, wherein the power source for the peripheral circuits utilizes said first power-source voltage, and the power source for the memory cells utilizes said second power-source voltage.
Claim 3
Dependent Claim
115 words
A static-type semiconductor memory device according to claim 1, wherein said high-voltage generating unit comprises an input terminal connected to said first power-source voltage, a first transistor in which the drain and the gate thereof are connected to each other and to said input terminal, a capacitor having one terminal connected to the source of said first transistor, an oscillator having an output connected to the other terminal of said capacitor, a second transistor in which the drain and the gate thereof are connected and in which the drain is connected to the junction point of said first transistor and said capacitor and the source is connected to the output of said high--voltage generating unit.
Claim 4
Dependent Claim
47 words
A static-type semiconductor memory device according to claim 2, wherein said capacitor is formed as an MOS capacitor in which the gate of the MOS transistor is used as one terminal and another terminal is formed by connecting the source and the drain of said MOS transistor.
Claim 5
Dependent Claim
18 words
A static-type semiconductor memory device according to claim 2, wherein said capacitor is formed as a conventional condenser.
Claim 6
Dependent Claim
18 words
A static-type semiconductor memory device according to claim 2, wherein said oscillator is formed as a ring oscillator.
Claim 7
Dependent Claim
46 words
A static-type semiconductor memory device, comprising memory cells and peripheral circuitry including a decoder, characterized by means for supplying power to the said memory cells at a higher voltage than that at which power is supplied to the peripheral circuitry when the device is in use.
Claim 8
Dependent Claim
46 words
A static-type semiconductor memory device, comprising memory cells and peripheral circuitry including a decoder, characterized by means for supplying power to the said memory cells at a higher voltage than that at which power is supplied to the peripheral circuitry when the device is in use.
Claim 9
Dependent Claim
72 words
A static-type semiconductor memory device, comprising memory cells and peripheral circuitry which includes a decoder and is powered from an external supply when the device is in use, characterized by voltage-boosting means incorporated in the device so as to supply power, derived from said external supply, to the said memory cells at a voltage higher than that at which power is supplied to the peripheral circuitry when the device is in use.
Claim 10
Dependent Claim
72 words
A static-type semiconductor memory device, comprising memory cells and peripheral circuitry which includes a decoder and is powered from an external supply when the device is in use, characterized by voltage-boosting means incorporated in the device so as to supply power, derived from said external supply, to the said memory cells at a voltage higher than that at which power is supplied to the peripheral circuitry when the device is in use.
References Cited (Backward Citations)
No citation records indexed.
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