Patent EP0087253A1 successfully refreshed from Google Patents.
EP0087253A1
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EP
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Improvements in or relating to semi-conductor lasers
Assignee: Plessey Overseas Ltd
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Filing: 1983-02-14
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Granted: —
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Expires: 2003-02-14
Abstract
Abstract In a semi-conductor laser of the buried active laser layer type, the laser layer is located between a layer of n-type material and a layer of p-type material, the sides of the active laser layer and at least a portion of the n-type layer and the p-type layer being covered with a plurality of thin layers with a doping sequence such that a large number of p-n junctions are included in the plurality of thin layers.
Inventors
- 👤 Robert Charles Goodfellow
- 👤 Malcolm Edward Harding
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 01:27
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2054; H01S5/2059; H01S5/2205; H01S5/2222; H01S5/2227; H01S5/2228; H01S5/2275
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
94 words
A semi-conductor laser comprising a plurality of epitaxial layers and a buried active laser layer characterised in that the active laser layer (14) is located between a layer of n-type material (10) and a layer of p-type material (12), the sides of the active laser layer (4) and at least a portion of each of the n-type layer (10) and the p-type layer being covered by a plurality of thin layers (28, 38) with a doping sequence such that a large number of p-n junctions are included in the plurality of thin layers (28,38).
Claim 2
Dependent Claim
94 words
A semi-conductor laser comprising a plurality of epitaxial layers and a buried active laser layer characterised in that the active laser layer (14) is located between a layer of n-type material (10) and a layer of p-type material (12), the sides of the active laser layer (4) and at least a portion of each of the n-type layer (10) and the p-type layer being covered by a plurality of thin layers (28, 38) with a doping sequence such that a large number of p-n junctions are included in the plurality of thin layers (28,38).
Claim 3
Dependent Claim
62 words
A semi-conductor laser as claimed in claim 1 in which the first (30) of the plurality of thin layers (28) covers the n-type layer (10) and the sides of the laser stripe (14) and the p-type layer (12), the following layer (32) being formed so as to completely cover the first layer (30) and the subsequent layers completely covering the preceding layer.
Claim 4
Dependent Claim
25 words
A semi-conductor laser as claimed in claim 2 in which the plurality of thin layers (28) is doped n-type, intrinsic, p-type, n-type, intrinsic, etc. sequentially.
Claim 5
Dependent Claim
33 words
A semi-conductor laser as claimed in claim 1 in which the active stripe (14) is located between an n-type layer (10) and a p-type layer (12) which together have a trapezoidal cross-sectional shape.
Claim 6
Dependent Claim
43 words
A semi-conductor laser as claimed in claim 4 in which the plurality of thin layers (38) is substantially planar whereby the ends of the layers (38) abut the sides of the n-type layer (10), the laser stripe (14) and the p-type layer 12.
Claim 7
Dependent Claim
23 words
A semi-conductor laser as claimed in claim 4 or 5 in which the plurality of thin layers (38) is doped p-type, n-type alternatively.
Claim 8
Dependent Claim
41 words
A semi-conductor laser as claimed in any preceding claim in which a metal contact (16) is formed on the plurality of thin layers (28,38) and the p-type material (12) and a further metal contact is formed on the n-type material (10).
Claim 9
Dependent Claim
35 words
A semi-conductor laser as claimed in any preceding claim in which the active laser stripe (14) comprises gallium indium arsenide phosphide, and the layers of n-type material (10) and p-type material (12) comprise indium phosphide.
Claim 10
Dependent Claim
19 words
A semi-conductor laser as claimed in-any preceding claim in which the plurality of thin layers (28,38) comprise indium phosphide.
References Cited (Backward Citations)
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