Patent EP0084621A2 successfully refreshed from Google Patents.
EP0084621A2
Expired / Lapsed
EP
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Semiconductor signal conversion device using photon coupling
Assignee: International Business Machines Corp
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Filing: 1982-11-23
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Granted: —
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Expires: 2002-11-23
Abstract
Abstract In a first region (2) of a monolithic direct bandgap semiconductor device, an electrical input signal is converted to photons which serve as carriers of the signal through a semi-insulating substrate (8). The photons are reconverted to an electrical output signal in a second region (10) of the device. At least one (10) of the signal conversion regions has a multi-PN-junction structure with the PN junctions disposed obliquely to the photon path through the device. Alternatively, the second region may perform the electrical signal-to-photon signal conversion and the first region the photon signal-to-electrical signal conversion. Applications of the device are for the conversion of AC to DC signals, AC to AC signals and DC to DC signals. The device can also serve as an electron accelerator capable of providing a field of 2000 volts per centimeter.
Inventors
- 👤 Terry Ivan Chappell
- 👤 Dieter W. Pohl
- 👤 Jerry Mcpherson Woodall
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 18:25
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/20; H10F55/25; H10F55/255
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
154 words
A semiconductor signal conversion device comprising a direct bandgap monocrystalline semiconductor body which is composed of a photon transparent electrically semi-insulating substrate (8) having substantially parallel first and second major surfaces and having a thickness less than that which would detrimentally attenuate photon transport, a first signal converting semiconductor means (2) epitaxially joined to said first major surface of the substrate (8) the first signal converting semiconductor means being operable to convert an electrical input signal to a photon signal and a second signal converting semiconductor means (10) epitaxially joined to said second major surface of the substrate (8) the second signal converting semiconductor means being operable to convert the photon signal to an electrical output signal; the device being characterised by at least one of the first and second signal converting semiconductor means having a multi-PN-junction structure in which the PN junctions are disposed obliquely to the photon path through the substrate (8).
Claim 2
Dependent Claim
154 words
A semiconductor signal conversion device comprising a direct bandgap monocrystalline semiconductor body which is composed of a photon transparent electrically semi-insulating substrate (8) having substantially parallel first and second major surfaces and having a thickness less than that which would detrimentally attenuate photon transport, a first signal converting semiconductor means (2) epitaxially joined to said first major surface of the substrate (8) the first signal converting semiconductor means being operable to convert an electrical input signal to a photon signal and a second signal converting semiconductor means (10) epitaxially joined to said second major surface of the substrate (8) the second signal converting semiconductor means being operable to convert the photon signal to an electrical output signal; the device being characterised by at least one of the first and second signal converting semiconductor means having a multi-PN-junction structure in which the PN junctions are disposed obliquely to the photon path through the substrate (8).
Claim 3
Dependent Claim
20 words
A device as claimed in claim 1, in which the second signal converting semiconductor means has a V-groove multi-PN-junction structure.
Claim 4
Dependent Claim
28 words
A device as claimed in claim 2, including a crystal lattice and index of refraction accommodation region positioned between said substrate and the second signal converting semiconductor means.
Claim 5
Dependent Claim
36 words
A device as claimed in claim 2 or claim 3, in which the first signal converting semiconductor means has a broad area structure including a P-N heterojunction substantially parallel to said major surface of the substrate.
Claim 6
Dependent Claim
23 words
A device as claimed in claim 2 or claim 3, in which the first signal converting semiconductor means has a V-groove multi-PN-junction structure.
Claim 7
Dependent Claim
33 words
A device as claimed in claim 5, in which the V-groove multi-PN-junction structure of the first signal converting semiconductor means has a different period from that of the second signal converting semiconductor means.
Claim 8
Dependent Claim
34 words
A device as claimed in claim 1, in which both the first and second signal converting semiconductor means have multi-PN-junction structures with one of the structures containing substantially more PN junctions than the other.
References Cited (Backward Citations)
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