Patent EP0083697A1 successfully refreshed from Google Patents.
EP0083697A1
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Double channel planar buried heterostructure laser
Assignee: NEC Corp
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Filing: 1982-10-18
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Granted: —
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Expires: 2002-10-18
Abstract
Abstract The semiconductor laser has a buried double heterostructure and comprises a semiconductor substrate (1) of a first conductivity type and a multi-layer double heterostructure (2,3,4) including successively at least a first cladding semiconductor layer (2) of the first conductivity type, an active semiconductor layer (3) and a second cladding semiconductor layer (3) of a second conductivity type. The active semiconductor layer (3) has a narrower bandgap than those of said first and second cladding semiconductor layers (2 and 4, respectively). The multi-layer double heterostructure has a stripe geometry (7) channelled along both sides thereof to an extent that two channels reach said first cladding layer (2). …<??>On the multi-layer double heterostructure there is formed a current blocking layer (8,9) except for the top surface of said stripe geometry (7), for blocking a current flow therethrough. …<??>The voltage to forward biasing the laser is supplied via a pair of electrodes (11). …<??>The blocking layers effectively function to enhance the temperature and output characteristics of the semiconductor laser to an unprecedented degree while enhancing the reproducibility and yield of manufacture.
Inventors
- 👤 Mitsuhiro Kitamura
- 👤 Ikuo Mito
- 👤 Kohroh Kobayashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 16:00
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; H01S5/2277
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
132 words
A semiconductor laser having a buried double heterostructure, comprising: a semiconductor substrate of a first conductivity type; a multi-layer double heterostructure including successively at least a first cladding semiconductor layer of the first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductively type, said active semiconductor layer having a narrower bandgap than those of said first and second cladding semiconductor layers, said multi-layer double heterostructure having a stripe geometry channelled along both sides thereof to an extent that two channels reach said first cladding layer; a current blocking layer formed on said multi-layer double heterostructure except for the top surface of said stripe geometry, for blocking a current flow therethrough; and a pair of electrodes for supplying a voltage to forward bias a semiconductor laser.
Claim 2
Dependent Claim
132 words
A semiconductor laser having a buried double heterostructure, comprising: a semiconductor substrate of a first conductivity type; a multi-layer double heterostructure including successively at least a first cladding semiconductor layer of the first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductively type, said active semiconductor layer having a narrower bandgap than those of said first and second cladding semiconductor layers, said multi-layer double heterostructure having a stripe geometry channelled along both sides thereof to an extent that two channels reach said first cladding layer; a current blocking layer formed on said multi-layer double heterostructure except for the top surface of said stripe geometry, for blocking a current flow therethrough; and a pair of electrodes for supplying a voltage to forward bias a semiconductor laser.
Claim 3
Dependent Claim
42 words
The semiconductor laser as set forth in claim 1, wherein said . current blocking layer comprises at least a set of a first blocking semiconductor layer and a second blocking semiconductor layer opposite in conductivity type to said first blocking semiconductor layer.
Claim 4
Dependent Claim
27 words
The semiconductor laser as set forth in claim 1 or 2, wherein the second cladding layer of the stripe geometry is thicker than those of other portions.
Claim 5
Dependent Claim
44 words
The semiconductor laser as set forth in claim 1 or 2, further comprisihg a burying semiconductor layer of the second conductivity type which is grown to bury the top surface of the stripe geometry and the current blocking layer to form a flat surface.
Claim 6
Dependent Claim
35 words
The semiconductor layer as set forth in claim 2 or 4, wherein the first blocking semiconductor layer is of the second conductivity type and the second blocking semiconductor layer is of the first conductivity type.
Claim 7
Dependent Claim
21 words
The semiconductor layer as set forth in claim 1 or 3, wherein edges of the channels are formed round in shape.
Claim 8
Dependent Claim
25 words
The semiconductor layer as set forth in claim 2 or 6, wherein the first blocking layer is made within the first cladding layer by diffusion.
Claim 9
Dependent Claim
151 words
A semiconductor laser having a buried double heterostructure, . comprising: a semiconductor substrate of a first conductivity type; a multi-layer double heterostructure including successively at least a first cladding semiconductor layer of the first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductively type, said active semiconductor layer having a narrower bandgap than those of said first and second cladding semiconductor layers, said multi-layer double heterostructure having a stripe geometry channelled along both sides thereof to an extent that two channels reach said first cladding layer; a semiconductor layer formed on said multi-layer double heterostructure of the second conductivity type; a blocking semiconductor layer of the first conductivity type formed on said semiconductor layer except for the top surface of said stripe geometry, for blocking a current flow therethrough; and a pair of electrodes for supplying a voltage to forward bias a semiconductor lases.
Claim 10
Dependent Claim
151 words
A semiconductor laser having a buried double heterostructure, . comprising: a semiconductor substrate of a first conductivity type; a multi-layer double heterostructure including successively at least a first cladding semiconductor layer of the first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductively type, said active semiconductor layer having a narrower bandgap than those of said first and second cladding semiconductor layers, said multi-layer double heterostructure having a stripe geometry channelled along both sides thereof to an extent that two channels reach said first cladding layer; a semiconductor layer formed on said multi-layer double heterostructure of the second conductivity type; a blocking semiconductor layer of the first conductivity type formed on said semiconductor layer except for the top surface of said stripe geometry, for blocking a current flow therethrough; and a pair of electrodes for supplying a voltage to forward bias a semiconductor lases.
References Cited (Backward Citations)
US3849790A
Cited
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