Patent EP0082526A2 successfully refreshed from Google Patents.
EP0082526A2
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Magnetic bubble memory device
Assignee: Hitachi Ltd
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Filing: 1982-12-20
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Granted: —
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Expires: 2002-12-20
Abstract
Abstract Disclosed is a magnetic bubble memory device having a first bubble propagation path (21) formed in an ion-implantation pattern and a second bubble propagation path made of permalloy elements (51, 53, 54) in combination. The majority of the area for forming the second propagation path is processed by ion implantation in lower density and to smaller depth than those of ion implantation for forming the first propagation path on the surface of a bubble supporting layer.
Inventors
- 👤 Ryo Suzuki
- 👤 Yutaka Sugita
- 👤 Naoki Kodama
- 👤 Masatoshi Takeshita
- 👤 Teruaki Takeuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 22:46
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0875; G11C19/0883; G11C19/0891
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
173 words
A magnetic bubble memory device comprising: a bubble supporting layer in which a bubble of cylindrical magnetic domain is held and propagated; a first ion-implanted region (2) formed in a surface area of said bubble supporting layer, said region having an ion-implantation pattern forming a first bubble propagation path (21) which propagates a magnetic bubble in accordance with a driving magnetic field revolving in the plane of said bubble supporting layer; a plurality of magnetically soft elements (51, 53, 54) formed over said bubble supporting layer, said elements being connected to said first bubble propagation path so as to form a second bubble propagation path which propagates a magnetic bubble in accordance with said driving magnetic field; and a second ion-implanted region (12, 12-1, 12-2) formed in a surface area of said bubble supporting layer so as to confront at least a majority of the area where said second bubble propagation path is formed, said second ion-implanted region being formed on a different ion implanting condition from that of said first ion-implanted region.
Claim 2
Dependent Claim
173 words
A magnetic bubble memory device comprising: a bubble supporting layer in which a bubble of cylindrical magnetic domain is held and propagated; a first ion-implanted region (2) formed in a surface area of said bubble supporting layer, said region having an ion-implantation pattern forming a first bubble propagation path (21) which propagates a magnetic bubble in accordance with a driving magnetic field revolving in the plane of said bubble supporting layer; a plurality of magnetically soft elements (51, 53, 54) formed over said bubble supporting layer, said elements being connected to said first bubble propagation path so as to form a second bubble propagation path which propagates a magnetic bubble in accordance with said driving magnetic field; and a second ion-implanted region (12, 12-1, 12-2) formed in a surface area of said bubble supporting layer so as to confront at least a majority of the area where said second bubble propagation path is formed, said second ion-implanted region being formed on a different ion implanting condition from that of said first ion-implanted region.
Claim 3
Dependent Claim
31 words
A magnetic bubble memory device according to claim 1, wherein said second ion-implanted region has a smaller distortion in the plane of the layer than that of said first ion-implanted region.
Claim 4
Dependent Claim
27 words
A magnetic bubble memory device according to claim 2, wherein said second ion-implanted region has a lower ion implantation density than that of said first ion-implanted region.
Claim 5
Dependent Claim
19 words
A magnetic bubble memory device according to claim 2, wherein said second ion-implanted region is formed by selective annealing.
Claim 6
Dependent Claim
21 words
A magnetic bubble memory device according to claim 1, wherein said second ion-implanted region is thinner than said first ion-implanted region.
Claim 7
Dependent Claim
32 words
A magnetic bubble memory device according to claim 5, wherein said second ion-implanted region is formed by ion implantation with a lower acceleration voltage than that for forming said first ion-implanted region.
Claim 8
Dependent Claim
30 words
A magnetic bubble memory device according to claim 1, wherein said second ion-implanted region is formed over the entire surface of said bubble supporting layer excluding said first ion-implanted region.
References Cited (Backward Citations)
No citation records indexed.
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