Patent EP0081208A2 successfully refreshed from Google Patents.
EP0081208A2
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EP
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Static memory cell
Assignee: Siemens AG
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Filing: 1982-12-02
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Granted: —
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Expires: 2002-12-02
Abstract
Abstract Static memory cell, including two fed-back inverters each having a switching transistor having drain, source and gate electrodes, a load element in the form of a depletion transistor having drain, source and gate electrodes, an output node connected to the drain electrode of the switching transistor and the gate electrode of the depletion transistor, and an additional potential source connected between the output node and the source electrode of the depletion transistor.
Inventors
- 👤 Cosimo Dr. Scianna
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 11:17
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/41; G11C11/412
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Total Claims: 0
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