Abstract There is provided a transistor circuit for amplification or oscillation capable of reducing power consumption in voltage dividing resistors for biassing use and of suppressing the variation of its characteristic owing to temperature change. The transistor circuit has a first transistor means (113) for amplification or oscillation and a biassing means for supplying a D.C. biassing voltage to the base of the first transistor means. The biassing means comprises a voltage dividing resistor means (111, 112) having an output terminal for providing a divided D.C. voltage, and a second transistor means (115) constituting an emitter follower circuit means, whose base is connected to the output terminal and whose emitter is coupled to the base of the first transistor means to provide the D.C. biassing voltage. Furthermore, the first transistor means may have an inverse conductive junction structure to that of the second transistor means.
-1. A transistor circuit having a first transistor means for amplification or oscillation and a biassing means for supplying a D.C. biassing voltage to the base of said first transistor means, said biassing means comprising a voltage dividing resistor means having an output terminal for providing a divided D. C. voltage, and a second transistor means constituting an emitter follower circuit means, whose base is connected to said output terminal and whose emitter. is coupled to the base of said first transistor means to provide said D. C. biassing voltage.
Claim 2
Dependent Claim
26 words
A transistor circuit as claimed in Claim 1, wherein said second transistor means has an inverse conductive junction structure to that of said first transistor means.
Claim 3
Dependent Claim
26 words
A transistor circuit as claimed in Claim 2, wherein said first transistor means is an NPN transistor and said second transistor means is a PNP transistor.