Patent EP0078541A2 successfully refreshed from Google Patents.
EP0078541A2
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Flexible photovoltaic device
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1982-11-03
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Granted: —
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Expires: 2002-11-03
Abstract
Abstract A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10- 7 (Ω·cm.) -1 at the time of light impinging and selected from a heat resistant polymer, a metal oxide, a crystalline or amorphous silicon compound and an organometallic compound.
Inventors
- 👤 Yoshihiro Hamakawa
- 👤 Yoshihisa Tawada
- 👤 Kazunori Tsuge
- 👤 Masanobu Izumina
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 10:42
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/10; H10F71/103; H10F10/00; H10F10/10; H10F10/17; H10F19/00; H10F19/30; H10F19/90; H10F19/902; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F77/1698; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
53 words
A photovoltaic device comprising a substrate including a metal foil and an electric insulating thin film having an electric conductivity of not more than about 10 -7 (Ω·cm.) -1 at the time of light impinging, and a photovoltaic device body of non-single-crystalline semiconductors, the body being formed on said electric insulating thin film.
Claim 2
Dependent Claim
53 words
A photovoltaic device comprising a substrate including a metal foil and an electric insulating thin film having an electric conductivity of not more than about 10 -7 (Ω·cm.) -1 at the time of light impinging, and a photovoltaic device body of non-single-crystalline semiconductors, the body being formed on said electric insulating thin film.
Claim 3
Dependent Claim
18 words
The device of Claim 1, wherein said electric insulating thin film is made of a heat resistant polymer.
Claim 4
Dependent Claim
33 words
The device of Claim 1, wherein said heat resistance polymer is a member selected from the group consisting of polyimide, polyamide, polyamidimide, polyhydantoin, polyparabanic acid, poly-p-xylylene, silicone, and cyclized polybutadiene homopolymer and copolymers.
Claim 5
Dependent Claim
37 words
The device of Claim 1, wherein the non-single-crystalline semiconductor is an amorphous silicon semiconductor or a multicomponent amorphous semiconductor made of amorphous silicon containing an element selected from the group consisting of C, N, Ge and Sn.
Claim 6
Dependent Claim
50 words
The device of Claim 1, wherein the non-single-crystalline semiconductor is an amorphous semiconductor made of an element selected from the group consisting of Si, Ge and Sn or a multicomponent amorphous semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.
Claim 7
Dependent Claim
37 words
The device of Claim 1, wherein the non-single-crystalline semiconductor is a microcrystalline silicon semiconductor or a multicomponent microcrystalline semiconductor made of microcrystalline silicon containing an element selected from the group consisting of C, N, Ge and Sn.
Claim 8
Dependent Claim
50 words
The device of Claim 1, wherein the non-single-crystalline semiconductor is a microcrystalline semiconductor made of an element selected from the group consisting of Si, Ge and Sn or a multicomponent microcrystalline semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.
Claim 9
Dependent Claim
90 words
The device of Claim 1, wherein said non-single-crystalline semiconductors include an amorphous semiconductor layer and a microcrystalline semiconductor layer, said amorphous semiconductor layer being an amorphous Si, Ge or Sn semiconductor or an amorphous multicomponent semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn, and said microcrystalline semiconductor layer being a microcrystalline Si, Ge or Sn semiconductor or a microcrystalline multicomponent semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.
Claim 10
Dependent Claim
19 words
The device of Claim 1, wherein said non-single-crystalline semiconductors have a three layer structure of a PIN junction type.
Claim 11
Dependent Claim
42 words
The device of Claim 9, wherein at least one of the P-layer and the N-layer is a multicomponent semiconductor made of a mixture of amorphous or microcrystalline silicon and an element selected from the group consisting of C, N, Ge and Sn.
Claim 12
Dependent Claim
16 words
The device of Claim 1, wherein said electric insulating thin film is an inorganic material film.
Claim 13
Dependent Claim
16 words
The device of Claim 11, wherein said inorganic material film is prepared by glow discharge decomposition.
Claim 14
Dependent Claim
49 words
The device of Claim 11, wherein said inorganic material film is a film of a member selected from the group consisting of Si (1-x) C x , Si (1-y) N y , Si (1-x-y) C x N y , the hydrides thereof, the fluorides thereof, and a metal oxide.
Claim 15
Dependent Claim
34 words
The device of Claim 1, wherein said electric insulating thin film includes a polymer layer contiguous to said metal foil and an inorganic material layer contiguous to an electrode for said photovoltaic device body.
Claim 16
Dependent Claim
40 words
The device of Claim 1, wherein said substrate is provided with a plurality of photovoltaic device bodies on the electric insutating thin film to give a plurality of generating zones, said generating zones being connectecd in series to each other.
References Cited (Backward Citations)
No citation records indexed.
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