Patent EP0077057A1 successfully refreshed from Google Patents.
EP0077057A1
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EP
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Negative-type resist sensitive to ionizing radiation
Assignee: Dai Nippon Printing Co Ltd
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Filing: 1982-10-08
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Granted: —
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Expires: 2002-10-08
Abstract
Abstract The use of an acetalized polyvinyl alcohol having a molecular weight of 10,000 to 1,000,000 represented by the formula: vherein: R 1 represents a residue of an aldehyde or a etone; H 2 represents a hydrogen atom, which may par- ially be substituted with an acetyl group; R 3 represents aught or a monomeric unit copolymerizable with vinyl cetate; and 1, m, n are integers indicating polymer- cation degrees, is a negative-type resist in ionizing radiation lithography.
Inventors
- 👤 Naoya Ogata
- 👤 Kohei Sanui
- 👤 Chiaki Azuma
- 👤 Hozumi Tanaka
- 👤 Kiyoshi Oguchi
- 👤 Yoichi Takahashi
- 👤 Tomihiro Nakada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 20:34
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/038
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
74 words
A negative-type resist sensitive to ionizing radiation, which comprises an acetalized polyvinyl alcohol polymer having a molecular weight of 10,000 to 1,000,000 represented by the formula: wherein: R 1 represents a residue of an aldehyde or a ketone; R 2 represents a hydrogen atom, which may partially be substituted by an acetyl group; R 3 represents naught or a monomeric unit copolymerizable with vinyl acetate; and 1, m, n are integers indicating polymerization degrees.
Claim 2
Dependent Claim
74 words
A negative-type resist sensitive to ionizing radiation, which comprises an acetalized polyvinyl alcohol polymer having a molecular weight of 10,000 to 1,000,000 represented by the formula: wherein: R 1 represents a residue of an aldehyde or a ketone; R 2 represents a hydrogen atom, which may partially be substituted by an acetyl group; R 3 represents naught or a monomeric unit copolymerizable with vinyl acetate; and 1, m, n are integers indicating polymerization degrees.
Claim 3
Dependent Claim
28 words
A negative-type resist according to Claim 1, wherein R 1 is a group selected from aliphatic saturated hydrocarbon groups, olefinic hydrocarbon groups, heterocyclic groups and epoxidized hydrocarbon groups.
Claim 4
Dependent Claim
19 words
A negative-type resist according to Claim 1, wherein R is a halo-containing residue of an aldehyde or a ketone.
Claim 5
Dependent Claim
40 words
A negative-type resist according to Claim 3, wherein R 1 is a group selected from aliphatic hydrocarbon groups, olefinic hydrocarbon groups, heterocyclic groups and epoxidized hydrocarbon groups in which at least one hydrogen atom has been replaced by a halogen.
Claim 6
Dependent Claim
25 words
A negative-type resist according to any of Claims 1 to 4, which comprises a mixture of said polyvinyl alcohol polymer with another polymer compatible therewith.
Claim 7
Dependent Claim
27 words
A negative-type resist according to Claim 5, wherein said another polymer is selected from polyvinyl acetate, ethylene/vinyl acetate copolymer, styrene/vinyl acetate copolymer and partially saponified products thereof.
Claim 8
Dependent Claim
34 words
A negative-type resist according to any of Claims 1 to 6, wherein the acetalized moiety content as represented by 1/(1 + m + n) in said acetalized polyvinyl alcohol is 20 to 85 mole%.
Claim 9
Dependent Claim
32 words
A negative-type resist according to any of Claims 1 to 6, which is in the form of a solution dissolved in a solvent selected from aromatic hydrocarbons, ketones, chlorinated hydrocarbons, and cellosolves.
Claim 10
Dependent Claim
121 words
An ionizing radiation lithography, which comprises forming on a substrate a thin film of a resist comprising an acetalized polyvinyl alcohol polymer having a molecular weight of 10,000 to 1,000,000 represented by the formula: wherein: R 1 represents a residue of an aldehyde or a ketone; R 2 represents a hydrogen atom, which may partially be substituted with an acetyl group; R 3 represents naught or a monomeric unit copolymerizable with vinyl acetate; and 1, m, n are integers indicating polymerization degrees, subjecting the thin film of said resist to imagewise irradiation by ionizing radiation, dissolving away selectively the non-irradiated portions of the resist film to expose corresponding portions of the substrate, and etching selectively the exposed portions of the substrate.
Claim 11
Dependent Claim
121 words
An ionizing radiation lithography, which comprises forming on a substrate a thin film of a resist comprising an acetalized polyvinyl alcohol polymer having a molecular weight of 10,000 to 1,000,000 represented by the formula: wherein: R 1 represents a residue of an aldehyde or a ketone; R 2 represents a hydrogen atom, which may partially be substituted with an acetyl group; R 3 represents naught or a monomeric unit copolymerizable with vinyl acetate; and 1, m, n are integers indicating polymerization degrees, subjecting the thin film of said resist to imagewise irradiation by ionizing radiation, dissolving away selectively the non-irradiated portions of the resist film to expose corresponding portions of the substrate, and etching selectively the exposed portions of the substrate.
Claim 12
Dependent Claim
29 words
An ionizing lithography according to Claim 9, wherein the non-irradiated portion is dissolved selectively with a solvent selected from aromatic hydrocarbons, chlorinated hydrocarbons, cellosolves, lower alcohols and mixtures thereof.
Claim 13
Dependent Claim
41 words
An ionizing lithography according to Claim 9 or 10, wherein etching is carried out with the use of a gaseous etchant comprising a halogen-containing gas such as carbon tetrachloride and carbon tetrafluoride or a mixture of such a gas with oxygen.
References Cited (Backward Citations)
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