Patent EP0076942A2 successfully refreshed from Google Patents.
EP0076942A2
Expired / Lapsed
EP
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Method of making integrated circuit device comprising dielectric isolation regions
Assignee: Toshiba Corp
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Filing: 1982-09-21
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Granted: —
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Expires: 2002-09-21
Abstract
Abstract A method of manufacturing a semiconductor device comprises the steps of: forming a mask pattern (3, 103) on one major surface of a semiconductor substrate (1, 101), the mask pattern having the side surfaces which are perpendicular to the one major surface or are reversely tapered; ion-implanting an impurity (5, 105) of the opposite conductivity type to that of the semiconductor substrate (1, 101) using the mask pattern (3, 103); and forming a groove (8, 108) in that portion of the semiconductor substrate (1, 101) which is close to the side surfaces of the mask pattern (3, 103).
Inventors
- 👤 Hiroshi Momose
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 10:38
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0188; H10D84/02; H10D84/03; H10D84/038; H10P30/21; H10P30/212; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/924; Y10S438/978
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
98 words
A method of manufacturing a semiconductor device comprising the steps of: forming a mask pattern(3, 103) on one major surface of a semiconductor substrate (1, 101), said mask pattern having side surfaces which are perpendicular to said one major surface or are reversely tapered; ion-implanting an impurity (5, 105) of an opposite conductivity type to a conductivity type of said semiconductor substrate (1, 101) using said mask pattern (3, 103); and forming a groove (8, 108) in a portion of said semiconductor substrate (1, 101) which is close to said side surfaces of said mask pattern (3, 103).
Claim 2
Independent Claim
98 words
A method of manufacturing a semiconductor device comprising the steps of: forming a mask pattern(3, 103) on one major surface of a semiconductor substrate (1, 101), said mask pattern having side surfaces which are perpendicular to said one major surface or are reversely tapered; ion-implanting an impurity (5, 105) of an opposite conductivity type to a conductivity type of said semiconductor substrate (1, 101) using said mask pattern (3, 103); and forming a groove (8, 108) in a portion of said semiconductor substrate (1, 101) which is close to said side surfaces of said mask pattern (3, 103).
Claim 3
Dependent Claim
27 words
A method according to claim 1, wherein said mask pattern (3, 103) is formed on said semiconductor substrate (1, 101) through a first insulating film (2, 102).
Claim 4
Dependent Claim
38 words
A method according to claim 2, wherein a second insulating film (4, 104) of a thickness smaller than a thickness of said first insulating film (2, 102) is formed on a surface of said mask pattern (3, 103).
Claim 5
Dependent Claim
63 words
A method according to claim 3, wherein a film (6) is formed on said first and second insulating films, said film (6) is subjected to an anisotropic treatment in a direction perpendicular to said semiconductor substrate (1), un-treated portions of said first and second insulating films are etched to form an opening (7), and said groove (8) is formed through said opening (7).
Claim 6
Dependent Claim
19 words
A method according to claim 4, wherein said anisotropic treatment comprises ion-implantation of an impurity into said film (6).
Claim 7
Dependent Claim
14 words
A method according to claim 5, wherein said film (6) comprises a polycrystalline film.
Claim 8
Dependent Claim
15 words
A method according to claim 4, wherein said groove (8) is formed by anisotropic etching.
Claim 9
Dependent Claim
64 words
A method according to claim 3, wherein a film (106) is formed by an anisotropic etching method on said first and second insulating films excluding portions corresponding to said side surfaces of said mask pattern, said first and second films are etched using said film (106) as a mask to form an opening (107), and said groove (108) is formed through said opening (107).
Claim 10
Dependent Claim
15 words
A method according to claim 8, wherein said film forming method comprises ion beam sputtering.
Claim 11
Dependent Claim
14 words
A method according to claim 9, wherein said film (106) comprises a polycrystalline film.
Claim 12
Dependent Claim
15 words
A method according to claim 8, wherein said groove (108) is formed by anisotropic etching.
Claim 13
Independent Claim
27 words
A method according to any one of claims 1 to 11, wherein said mask pattern (3, 103) is formed by anisotropic etching of a polycrystalline silicon film.
Claim 14
Independent Claim
27 words
A method according to any one of claims 1 to 11, wherein said mask pattern (3, 103) is formed by anisotropic etching of a silicon nitride film.
References Cited (Backward Citations)
No citation records indexed.
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