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EP0075833A2
Expired / Lapsed
EP
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Semiconductor-temperature sensor
Assignee: Siemens AG
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Filing: 1982-09-20
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Granted: —
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Expires: 2002-09-20
Abstract
Abstract Translated from German Die Erfindung betrifft einen Temperatursensor mit einem schichtförmigen Halbleiterkörper (3) als Meßwiderstand. Dieser Halbleiterkörper (3) ist auf einem Halbleitersubstrat (6) aufgebracht und mit zwei Kontaktelektroden (2, 8; 9, 13) versehen, die an den Enden des Halbleiterkörpers (3) liegen. The invention relates to a temperature sensor with a layered semiconductor body (3) as a measuring resistor. This semiconductor body (3) is applied to a semiconductor substrate (6) and provided with two contact electrodes (2, 8; 9, 13) which are located at the ends of the semiconductor body (3).
Inventors
- 👤 Gilbert Dr.-Ing. Tomasi
- 👤 Heinz Dr. Rer. Nat. Mitlehner
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 09:40
CPC Classifications
G; G01; G01K; G01K7/00; G01K7/16; G01K7/22; G01K7/223
Claims Analysis
Total Claims: 0
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