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EP0073603A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Polycrystalline thin-film transistor,integrated circuit including such transistors and a display device including such a circuit

Assignee: Hitachi Ltd
•
Filing: 1982-08-18
•
Granted: —
•
Expires: 2002-08-18
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Abstract

Abstract A polycristalline thin-film transistor has a polycristalline silicon layer 2 formed on a substrate 1. The layer 2 includes at least a pair of electrode-contacted regions 4 for causing carriers to migrate, and there are means for controlling the carriers. In order to achieve high uniformity of characteristics among the different transistors in the layer, the length of the region in which the carriers migrate is at least 10 times greater than the mean grain size of the silicon in the general migration direction of the carriers, and the mean grain size in at least the region in which the carriers migrate is not less than 150 nm. Preferably, the ratio between the coefficients of thermal expansion of the substrate and the polycrystalline silicon layer is in the range 0.3 to 3.0.

Inventors

  • 👤 Makoto Matsui
  • 👤 Yasuhiro Shiraki
  • 👤 Eiichi Maruyama

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 12:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D62/00; H10D62/40

Claims Analysis

Total Claims: 7
Claim 1
Independent Claim 102 words
A polycrystalline thin-film transistor wherein a polycrystalline silicon layer (2) is formed on a substrate (1), the polycrystalline silicon layer (1) including at least a pair of electrode regions (4) for causing carriers to migrate, and there being means (7,8,9) for controlling the carriers characterized in that the length of the region in which the carriers migrate is at least ten times greater than the mean grain size of the polycrystalline silicon in the general migration direction of the carriers, the said mean grain size in at least the said region in which the carriers migrate is not less than 150 nm.
Claim 2
Dependent Claim 102 words
A polycrystalline thin-film transistor wherein a polycrystalline silicon layer (2) is formed on a substrate (1), the polycrystalline silicon layer (1) including at least a pair of electrode regions (4) for causing carriers to migrate, and there being means (7,8,9) for controlling the carriers characterized in that the length of the region in which the carriers migrate is at least ten times greater than the mean grain size of the polycrystalline silicon in the general migration direction of the carriers, the said mean grain size in at least the said region in which the carriers migrate is not less than 150 nm.
Claim 3
Dependent Claim 40 words
A polycrystalline thin-film transistor according to claim 1, wherein the said length of the region in which the carriers migrate is at least 50 times greater than the said mean grain size in the general migration direction of the carriers.
Claim 4
Dependent Claim 36 words
A polycrystalline thin-film transistor according to claim 1 or claim 2 wherein the ratio between the coefficients of thermal expansion of the substrate and of the polycrystalline silicon layer is in the range 0.3 to 3.0.
Claim 5
Dependent Claim 29 words
A polycrystalline thin-film transistor according to any one of claims 1 to 3 wherein said polycrystalline silicon layer is a polycrystalline film formed by vacuum evaporation in ultra-high vacuum.
Claim 6
Dependent Claim 26 words
A semiconductor integrated circuit including a plurality of transistors according to any one of claims 1 to 4 included in a single said polycrystalline layer (2).
Claim 7
Dependent Claim 12 words
A display device including a semiconductor integrated circuit according to claim 5.

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