Patent EP0072216A2 successfully refreshed from Google Patents.
EP0072216A2
Expired / Lapsed
EP
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The production of semiconductor devices by methods involving annealing
Assignee: Fujitsu Ltd
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Filing: 1982-08-05
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Granted: —
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Expires: 2002-08-05
Abstract
Abstract A method of producing a semiconductor device comprises the steps of forming a gate insulating layer (3) on a semiconductor substrate (1) of one conductivity type; forming as aluminum gate electrode (4) on said gate insulating layer (3); forming impurity doped regions (5, 6) in said semiconductor substrate (1) by means of implantation of opposite conductivity type impurity ions into the semiconductor substrate (1) using said aluminum gate electrode (4) as a mask; and annealing said impurity doped regions (5, 6) by subjecting them to an irradiating beam which also impinges on the aluminum gate electrode (4). To reduce the possibility of damage to the electrode (4) resulting from the annealing process, at least the upper surface of the electrode (4) is covered with an insulating layer (7) before the annealing is carried out.
Inventors
- 👤 Nobuo Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 07:34
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/60; H10P; H10P34/00; H10P34/40; H10P34/42; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/09; Y10S148/091; Y10S148/106; Y10S148/141
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
119 words
A method of producing a semiconductor device, wherein first regions of a semiconductor substrate, at a main surface thereof, are doped with impurity ions by an ion implantation process in which the impurity ions are withheld from an adjacent region of the substrate, at the said main surface thereof, by means of an aluminum electrode of the device that is formed over the said adjacent region, whereafter an annealing process is carried out by directing a beam of radiation onto the said first regions, characterised in that an insulating covering layer is provided on the electrode, before the annealing process is carried out, so as to reduce the possibility of damage to the electrode resulting from the annealing process.
Claim 2
Independent Claim
119 words
A method of producing a semiconductor device, wherein first regions of a semiconductor substrate, at a main surface thereof, are doped with impurity ions by an ion implantation process in which the impurity ions are withheld from an adjacent region of the substrate, at the said main surface thereof, by means of an aluminum electrode of the device that is formed over the said adjacent region, whereafter an annealing process is carried out by directing a beam of radiation onto the said first regions, characterised in that an insulating covering layer is provided on the electrode, before the annealing process is carried out, so as to reduce the possibility of damage to the electrode resulting from the annealing process.
Claim 3
Independent Claim
113 words
A method of producing a semiconductor device comprising the steps of: forming a gate insulating layer on a semiconductor substrate of one conductivity type, forming an aluminum gate electrode on said gate insulating layer, forming impurity doped regions in said semiconductor substrate by means of implantation of opposite conductivity type impurity ions into said semiconductor substrate adjacent to said aluminum gate electrode which serves as a mask, and annealing said impurity doped regions (5,6) by subjecting them to an irradiating beam which also impinges on said aluminum gate electrode (4); characterised in that before said annealing at least the upper surface of said aluminum gate electrode is covered with an insulating layer (7).
Claim 4
Independent Claim
113 words
A method of producing a semiconductor device comprising the steps of: forming a gate insulating layer on a semiconductor substrate of one conductivity type, forming an aluminum gate electrode on said gate insulating layer, forming impurity doped regions in said semiconductor substrate by means of implantation of opposite conductivity type impurity ions into said semiconductor substrate adjacent to said aluminum gate electrode which serves as a mask, and annealing said impurity doped regions (5,6) by subjecting them to an irradiating beam which also impinges on said aluminum gate electrode (4); characterised in that before said annealing at least the upper surface of said aluminum gate electrode is covered with an insulating layer (7).
Claim 5
Dependent Claim
48 words
A method as claimed in claim 1 or 2, wherein the thickness of said insulating layer (3) is substantially equal to λ(2M-1)/4n', where n' is the index of refraction of said gate insulating layer (3), Àis the beam wavelength in a vacuum, and M is a positive integer.
Claim 6
Dependent Claim
49 words
A method as claimed in claim 1, 2 or 3, wherein the thickness of the insulating covering layer (7) is substantially equal to λm/2n; where n is the index of refraction of the insulating covering layer, λis the beam wavelength in a vacuum, and m is a positive integer-.
Claim 7
Independent Claim
22 words
A method as claimed in any preceding claim, wherein said beam comprises a laser beam, an electron beam, or a lamp beam.
Claim 8
Independent Claim
19 words
A method as claimed in any preceding claim, wherein the insulating covering layer (7) is made of aluminum oxide.
Claim 9
Independent Claim
23 words
A method as claimed in any one of claims 1 to 5, wherein the insulating covering layer (7) is made of silicon nitride.
Claim 10
Independent Claim
23 words
A method as claimed in any one of claims 1 to 5, wherein the insulating covering layer (7) is made of silicon dioxide.
References Cited (Backward Citations)
No citation records indexed.
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