Power MOS field effect transistor and method of producing the same

Abstract

Abstract 1. A power-MOS-field effect transistor (MOS-FET) comprising a semiconductor body (1), containing a first zone (3) of the first conductivity type, a channel zone (6) of the second conductivity type adjoining the first surface (4) of the semiconductor body, a source zone (7) of the first conductivity type arranged in the channel zone and adjoining the first surface, the first zone (3) forming the drain zone and adjoining the first surface of the semiconductor body, a source contact (15) connecting the channel zone and the source zone, a drain contact (16) arranged on the second surface (5) of the semiconductor body which is located opposite the first surface thereof, and a gate electrode (8) which is insulated from the first surface, characterised in that at least the drain zone (3) is doped with metal atoms which form recombination centres.

Inventors

• 👤 Gottfried Schuh
• 👤 Jenö Dr.-Ing. Tihanyi

Bibliographic Details