Patent US2689307A successfully refreshed from Google Patents.
Patent EP0071335A2 successfully refreshed from Google Patents.
EP0071335A2
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EP
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Field effect transistor
Assignee: Xerox Corp
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Filing: 1982-06-10
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Granted: —
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Expires: 2002-06-10
Abstract
Abstract A short-channel field effect transistor including a standard tip implant type of source (12, 40, 56) and drain (14,42, 58) each disposed in the surface of a semiconductor; a gate electrode (30, 46) positioned upon the semiconductor between the source and drain, and control plugs (24, 26, 52, 54, 62, 64) contiguous with the source and drain for eliminating substrate punch-through currents without substantially increasing the device junction capacitance.
Inventors
- 👤 Jacob D. Haskell
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 12:10
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
183 words
A short channel field effect transistor including a substrate (10, 38, 66), a source region (16, 40, 56) of a first conductivity type disposed upon said substrate and comprising a relatively shallow diffused portion (20) contiguous with a relatively deep diffused portion, a drain region (18, 42, 58) of said first conductivity type disposed upon said substrate and comprising a relatively shallow diffused portion (22) contiguous with a relatively deep diffused portion, wherein said shallow portions are spaced apart from each other, a gate insulation film (28, 48) located on a surface between said source and drain regions, a gate electrode (30, 50, 46) located upon said gate insulation film, a source electrode (32) in contact with the upper surface of said source region, a drain electrode (34) in contact with the upper surface of said drain region, plug regions (24, 26, 52, 54, 62, 64) of a second conductivity type, opposite said first conductivity type, contiguous with each source and drain region and located beneath each of said shallow diffused portions and to the side of each of said deep diffused portions.
Claim 2
Dependent Claim
183 words
A short channel field effect transistor including a substrate (10, 38, 66), a source region (16, 40, 56) of a first conductivity type disposed upon said substrate and comprising a relatively shallow diffused portion (20) contiguous with a relatively deep diffused portion, a drain region (18, 42, 58) of said first conductivity type disposed upon said substrate and comprising a relatively shallow diffused portion (22) contiguous with a relatively deep diffused portion, wherein said shallow portions are spaced apart from each other, a gate insulation film (28, 48) located on a surface between said source and drain regions, a gate electrode (30, 50, 46) located upon said gate insulation film, a source electrode (32) in contact with the upper surface of said source region, a drain electrode (34) in contact with the upper surface of said drain region, plug regions (24, 26, 52, 54, 62, 64) of a second conductivity type, opposite said first conductivity type, contiguous with each source and drain region and located beneath each of said shallow diffused portions and to the side of each of said deep diffused portions.
Claim 3
Dependent Claim
31 words
A field effect transistor as claimed in claim 2, in which the substrate is of a semiconductive material (10, 38) of type opposite to that of the source and drain regions.
Claim 4
Dependent Claim
44 words
A transistor as claimed in claim 1 or 2, in which said plug regions are positioned so that the facing parts of said shallow diffused portions are not blocked thereby, and in which said plug regions are slightly shallower than said deep diffused portions.
Claim 5
Dependent Claim
20 words
A transistor as claimed in any preceding claim, in that said source and drain electrodes overlie said deep diffused portions.
Claim 6
Dependent Claim
29 words
A transistor as claimed in any preceding claim, including a channel region (44) of the second conductivity type underlying said gate and located between said source and drain regions.
Claim 7
Dependent Claim
24 words
A transistor as claimed in claims 2 and 5, in which said channel region has an impurity concentration approximately the same as said substrate.
Claim 8
Dependent Claim
17 words
A transistor as claimed in claim 1, in which the substrate is of an insulating material (66).
Claim 9
Dependent Claim
45 words
A transistor as claimed in claim 7, including a channel region (60) of semiconductive material of either conductivity type located below the gate electrode and contiguous with the plug regions and the unshielded end faces of the shallow portions of the source and drain regions.
References Cited (Backward Citations)
No citation records indexed.
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