Patent EP0068897A2 successfully refreshed from Google Patents.
EP0068897A2
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A method of forming an electrode of a semiconductor device
Assignee: Hitachi Ltd
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Filing: 1982-06-30
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Granted: —
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Expires: 2002-06-30
Abstract
Abstract To form an electrode in a semiconductor device, after a silicon layer (5) is selectively grown on that part of a silicon substrate surface on which the electrode is to be formed, the silicon layer (5) is reacted with a refractory metal (6) so as to form the electrode as a metal silicide layer (8). In this way, the problem of a metal layer ruining a pn-junction (7) in the substrate is avoided, and a device of high packaging density can be formed.
Inventors
- 👤 Shojiro Sugaki
- 👤 Masahiko Ogirima
- 👤 Naoki Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 12:43
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
142 words
A method of forming an electrode of a semiconductor device wherein a Si layer (5) is formed on a semiconductor substrate (1) and a metal layer (6) is formed on the Si layer to react therewith to form metal silicide electrode (8), characterized by the steps of: (A)- forming an insulating film (3) onto a surface of the semiconductor substrate (1) in a manner which exposes that part of the said surface on which the electrode is to be formed, (B) selectively growing the Si layer (5) on the exposed surface of said semiconductor substrate (1), (C) depositing a refractory metal layer (6) as said metal layer so as to cover at least said Si layer (5), and (D) heating the resultant substrate to react said Si layer (5), and said refractory metal layer (6) to form a metal silicide layer (8).
Claim 2
Independent Claim
142 words
A method of forming an electrode of a semiconductor device wherein a Si layer (5) is formed on a semiconductor substrate (1) and a metal layer (6) is formed on the Si layer to react therewith to form metal silicide electrode (8), characterized by the steps of: (A)- forming an insulating film (3) onto a surface of the semiconductor substrate (1) in a manner which exposes that part of the said surface on which the electrode is to be formed, (B) selectively growing the Si layer (5) on the exposed surface of said semiconductor substrate (1), (C) depositing a refractory metal layer (6) as said metal layer so as to cover at least said Si layer (5), and (D) heating the resultant substrate to react said Si layer (5), and said refractory metal layer (6) to form a metal silicide layer (8).
Claim 3
Dependent Claim
50 words
A method according to claim 1 wherein after step (D) the following steps are performed: (E) removing an unreacted part of said refractory metal layer (6) to expose a surface of said metal silicide layer (8), and (F) forming a wiring layer (9) connected to said metal silicide layer (8).
Claim 4
Dependent Claim
40 words
A method according to claim 1 wherein after the step (D), the following step is performed: (E') removing a predetermined part or parts of the unreacted part of said refractory metal layer (6) so as to form a wiring layer.
Claim 5
Independent Claim
30 words
A method according to any one of claims 1 to 3, wherein said silicon layer (5) is a Si epitaxial layer, a polycrystalline Si layer or an amorphous Si layer.
Claim 6
Independent Claim
25 words
A method according to any one of claims 1 to 4 wherein the refractory metal is at least. one of Mo, Ta, Ti and W.
References Cited (Backward Citations)
No citation records indexed.
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