Patent EP0068679A2 successfully refreshed from Google Patents.
EP0068679A2
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Method of manufacturing semiconductor devices comprising isolating regions
Assignee: Hitachi Ltd
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Filing: 1982-06-09
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Granted: —
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Expires: 2002-06-09
Abstract
Abstract After filling isolation grooves (12) with a filling material (15), this filling material is etched by the use of a double-layer film (16, 17) which is made of substances different from each other. Side etching of the lower film (16) of the double-layer film and etching of the filling material (15) are alternately performed in such a manner that each etching is carried out two or more times. Thus, the upper surface of the filling material contained in each groove can be flattened, to improve the reliability of wiring formed over the upper surface.
Inventors
- 👤 Yoichi Tamaki
- 👤 Tokuo Kure
- 👤 Takeo Shiba
- 👤 Hisayuki Higuchi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 10:06
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10P95/066; H10P50/00; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
140 words
A method of manufacturing a semiconductor device, comprising the steps of (i) forming grooves (12) in a major surface of a semiconductor substrate (7), (ii) depositing a filling material (15) on the surface of the substrate, filling the grooves (12), (iii) forming a film over the grooves (12), and (iv) etching the filling material (15) using said film as a mask, to remove filling material outside the grooves (12), characterised in that in step (iii) two films (16,17) are formed of materials different from each other, that the method includes a step of side-etching the lower said film (16), that in step (iv) the filling material (15) is etched using said lower film (16) as a mask, and in that the steps of side-etching the lower film (16) and etching the filling material (15) are repeated at least once more.
Claim 2
Independent Claim
140 words
A method of manufacturing a semiconductor device, comprising the steps of (i) forming grooves (12) in a major surface of a semiconductor substrate (7), (ii) depositing a filling material (15) on the surface of the substrate, filling the grooves (12), (iii) forming a film over the grooves (12), and (iv) etching the filling material (15) using said film as a mask, to remove filling material outside the grooves (12), characterised in that in step (iii) two films (16,17) are formed of materials different from each other, that the method includes a step of side-etching the lower said film (16), that in step (iv) the filling material (15) is etched using said lower film (16) as a mask, and in that the steps of side-etching the lower film (16) and etching the filling material (15) are repeated at least once more.
Claim 3
Dependent Claim
20 words
A method of manufacturing a semiconductor device as defined in claim 1, wherein said filling material (15) is polycrystalline silicon.
Claim 4
Dependent Claim
30 words
A method of manufacturing a semiconductor device as defined in claim 2, wherein prior to the step (ii), an insulating film (13) is formed on surfaces of said grooves (12).
Claim 5
Dependent Claim
34 words
A method of manufacturing a semiconductor device as defined in claim 3, wherein said insulating film is a double-layer film which consists of a silicon dioxide film (13) and a silicon nitride film (14).
Claim 6
Independent Claim
44 words
A method of manufacturing a semiconductor device as defined in any of claims 2 to 4, wherein the upper film (17) of said two films deposited in step (iii) is a silicon nitride film, while the lower film (16) is a silicon dioxide film.
Claim 7
Independent Claim
43 words
A method of manufacturing a semiconductor device as defined in any of claims 2 to 5, wherein said polycrystalline silicon (15) is etched with an etchant selected from hydrazine, potassium hydroxide, sodium hydroxide, or a mixed solution of fluoric acid and nitric acid.
Claim 8
Dependent Claim
28 words
A method of manufacturing a semiconductor device as defined in claim 1, wherein said filling material is selected from silicon dioxide, silicon nitride, aluminum oxide, and polyimide isoindoloquinazolinedione.
References Cited (Backward Citations)
No citation records indexed.
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