Patent EP0068154A2 successfully refreshed from Google Patents.
EP0068154A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Integrated circuit containing a semiconductive substrate having field isolation regions and electrically conductive regions
Assignee: International Business Machines Corp
•
Filing: 1982-05-28
•
Granted: —
•
Expires: 2002-05-28
Abstract
Abstract An integrated circuit in the form of a MOSFET device contains a refractory metallic silicide (9) beneath a field isolation region (10) and in electrical contact with electrical conductive regions (P) of active impurity dopants in a semiconductive substrate (21).The layer of silicide (9) is fabricated by depositing refractory metal and reacting it with the substrate beneath by heat or ion implantation.
Inventors
- 👤 Randall Duane Isaac
- 👤 Tak Hung Ning
- 👤 Denny Duan-Lee Yang
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 15:15
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/014; H10W10/0148; H10W10/10; H10W10/13; H10W10/17; H10W20/00; H10W20/01; H10W20/021; H10W20/20
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
46 words
1 An integrated circuit containing a semiconductive substrate (2,3,4) having field isolation regions (10) and electrical conductive regions of active impurity dopants, characterised by a refractory metallic silicide (9) beneath field isolation regions (10) and in electrical contact with electrical conductive regions of active impurity dopants.
Claim 2
Dependent Claim
46 words
1 An integrated circuit containing a semiconductive substrate (2,3,4) having field isolation regions (10) and electrical conductive regions of active impurity dopants, characterised by a refractory metallic silicide (9) beneath field isolation regions (10) and in electrical contact with electrical conductive regions of active impurity dopants.
Claim 3
Dependent Claim
31 words
2 A circuit according to claim 1, in which the refractory metallic silicide is selected from the group of silicides of tungsten, tantalum, niobium, molybdenum, hafnium, cobalt, vanadium, and mixtures thereof.
Claim 4
Dependent Claim
25 words
3 A circuit according to claim 2, in which the metallic silicide is selected from the group of silicides of tungsten, tantalum, and mixtures thereof.
Claim 5
Dependent Claim
20 words
4 A circuit according to claim 1, 2 or 3, in which the field isolation region is of silicon dioxide.
Claim 6
Dependent Claim
82 words
5 A process for fabricating an integrated circuit which comprises thermally diffusing or ion-implanting active impurities of a conductive type into predetermined regions of a semiconductive substrate of the same conductive type, depositing a refractory metal at and in electrical connection with the predetermined regions of the semiconductive substrate, reacting the metal with the substrate beneath the metal to form a layer of an electrically conductive refractory compound, and providing an insulating layer above the layer of an electrically conductive refractory compound.
Claim 7
Dependent Claim
82 words
5 A process for fabricating an integrated circuit which comprises thermally diffusing or ion-implanting active impurities of a conductive type into predetermined regions of a semiconductive substrate of the same conductive type, depositing a refractory metal at and in electrical connection with the predetermined regions of the semiconductive substrate, reacting the metal with the substrate beneath the metal to form a layer of an electrically conductive refractory compound, and providing an insulating layer above the layer of an electrically conductive refractory compound.
Claim 8
Dependent Claim
28 words
6 A process according to claim 5, in which the refractory metal is selected from the group of tungsten, tantalum, niobium, molybdenum, hafnium, cobalt, vanadium and mixtures thereof.
Claim 9
Dependent Claim
23 words
7 A process according to claim 6, in which the refractory metal is selected from the group of tungsten, tantalum, and mixtures thereof.
Claim 10
Dependent Claim
32 words
8 A process according to claim 5, 6 or 7, in which the metal is reacted with the substrate at a temperature of about 700° to about 11 00 ° C .
Claim 11
Dependent Claim
26 words
9 A process according to claim 5, 6 or 7, in which the metal is reacted with the substrate by implanting ions through the metal layer.
Claim 12
Dependent Claim
24 words
10 A process according to claim 9, in which the ion is selected from the group of argon, krypton, xenon, antimony or silicon ions.
Claim 13
Dependent Claim
25 words
11 A process according to any of claims 5 to 10, in which the thickness of the metal layer is about 500 to about 2000A.
Claim 14
Dependent Claim
20 words
12 A process according to any of claims 5 to 11, in which the semiconductive substrate is a silicon substrate.
Claim 15
Dependent Claim
19 words
13 A process according to any of claims 5 to 11, in which the insulating layer is silicon dioxide.
Claim 16
Dependent Claim
18 words
14 A process according to claim 13, in which the silicon dioxide layer is formed by thermal oxidation.
Claim 17
Dependent Claim
19 words
15 A process according to claim 13, in which the silicon dioxide layer is formed by chemical vapour deposition.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.