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Patent EP0067738A2 successfully refreshed from Google Patents.
EP0067738A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of reducing encroachment in a semiconductor device
Assignee: Fairchild Semiconductor Corp
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Filing: 1982-05-18
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Granted: —
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Expires: 2002-05-18
Abstract
Abstract A nitride layer of a semiconductor device is etched to expose a portion of a layer of silicon dioxide, in turn disposed on a semiconductor substrate, and a thin layer of polysilicon is deposited over the resulting structure prior to growth of an insulating region in the form of a field oxide, with the nitride layer being used as a mask.
Inventors
- 👤 G. R. Padmanabhan
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 05:30
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10P; H10P95/00; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
61 words
A method of forming an insulating region for a semiconductor device comprising: providing a substrate of semiconductor material; providing a layer of oxide over the substrate; forming a mask over the oxide, which defines an opening exposing a portion of the oxide; providing a layer of polysilicon over the resulting structure; and oxidizing the resulting structure to grow an insulating region.
Claim 2
Independent Claim
61 words
A method of forming an insulating region for a semiconductor device comprising: providing a substrate of semiconductor material; providing a layer of oxide over the substrate; forming a mask over the oxide, which defines an opening exposing a portion of the oxide; providing a layer of polysilicon over the resulting structure; and oxidizing the resulting structure to grow an insulating region.
Claim 3
Dependent Claim
13 words
The method of Claim 1 wherein the mask is formed of silicon nitride.
Claim 4
Dependent Claim
23 words
The method of Claim 1 and further comprising the step of etching the oxide subsequent to the step of growing the insulating region.
References Cited (Backward Citations)
No citation records indexed.
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