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EP0067738A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of reducing encroachment in a semiconductor device

Assignee: Fairchild Semiconductor Corp
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Filing: 1982-05-18
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Granted: —
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Expires: 2002-05-18
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Abstract

Abstract A nitride layer of a semiconductor device is etched to expose a portion of a layer of silicon dioxide, in turn disposed on a semiconductor substrate, and a thin layer of polysilicon is deposited over the resulting structure prior to growth of an insulating region in the form of a field oxide, with the nitride layer being used as a mask.

Inventors

  • 👤 G. R. Padmanabhan

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-01 00:05
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10P; H10P95/00; H10W10/10; H10W10/13

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 61 words
A method of forming an insulating region for a semiconductor device comprising: providing a substrate of semiconductor material; providing a layer of oxide over the substrate; forming a mask over the oxide, which defines an opening exposing a portion of the oxide; providing a layer of polysilicon over the resulting structure; and oxidizing the resulting structure to grow an insulating region.
Claim 2
Independent Claim 61 words
A method of forming an insulating region for a semiconductor device comprising: providing a substrate of semiconductor material; providing a layer of oxide over the substrate; forming a mask over the oxide, which defines an opening exposing a portion of the oxide; providing a layer of polysilicon over the resulting structure; and oxidizing the resulting structure to grow an insulating region.
Claim 3
Dependent Claim 13 words
The method of Claim 1 wherein the mask is formed of silicon nitride.
Claim 4
Dependent Claim 23 words
The method of Claim 1 and further comprising the step of etching the oxide subsequent to the step of growing the insulating region.

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