Patent EP0067566A2 successfully refreshed from Google Patents.
EP0067566A2
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EP
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Integrated light detection or generation means and amplifying means
Assignee: Plessey Overseas Ltd
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Filing: 1982-05-25
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Granted: —
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Expires: 2002-05-25
Abstract
Abstract The invention relates to a monolithic light detector or generator integrated with an amplifier. The amplifier includes an F.E.T. comprising a substrate on which are formed source and drain contact layers separated by a groove. The gate layer is formed in the groove bridging the source and drain layers, and the optical system comprises additional layers formed on the substrate or formed on top of the gate layer with suitable conductive connections between the two.
Inventors
- 👤 Robert Charles Goodfellow
- 👤 Andrew Cannon Carter
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-01 16:13
CPC Classifications
H; H10; H10F; H10F99/00; H10F39/00; H10F39/10; H10F39/103
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
57 words
Integrated light detecting or generating means and amplifying means comprising a field effect transistor comprising a semi-insulating substrate on which are formed source and drain layers separated by a groove, a gate layer formed in the groove bridging the source and drain layers, and further layers forming light detecting or generating means to form a monolithic structure.
Claim 2
Dependent Claim
57 words
Integrated light detecting or generating means and amplifying means comprising a field effect transistor comprising a semi-insulating substrate on which are formed source and drain layers separated by a groove, a gate layer formed in the groove bridging the source and drain layers, and further layers forming light detecting or generating means to form a monolithic structure.
Claim 3
Dependent Claim
18 words
Integrated means as claimed in claim 1 in which the further layers are directly formed on the substrate.
Claim 4
Dependent Claim
18 words
Integrated means as claimed in claim 1 in which the further layers are formed on the gate layer.
Claim 5
Dependent Claim
21 words
Integrated means as claimed in any preceding claim in which the further layers define a light detector, such as a photo-diode.
Claim 6
Dependent Claim
26 words
Integrated means as claimed in any of claims 1 to 3 in which the further layers define a light source such as a light emitting diode.
Claim 7
Dependent Claim
32 words
Integrated means as claimed in any preceding claim in which the source and drain layers each comprises a buffer layer, high conductivity source and drain layers and a high resistance cover layer.
Claim 8
Dependent Claim
25 words
Integrated means as claimed in claim 4 in which the light detector comprises a p-n photodiode consisting of p-type layers formed on the gate layer.
Claim 9
Dependent Claim
32 words
Integrated means as claimed in claim 7 in which the groove between the source and drain layers is V-shaped, and the gate layer and the photodiode layers are formed in the groove.
Claim 10
Independent Claim
64 words
A method of making integrated light detecting or generating means and amplifying means comprising the steps of forming an F.E.T. high conductivity source/drain layer on a substrate, forming a groove in the layer produced to divide the layer into two parts, producing an F.E.T. gate layer in the groove to bridge the two layers and producing further layers forming light detecting or generating means.
Claim 11
Independent Claim
64 words
A method of making integrated light detecting or generating means and amplifying means comprising the steps of forming an F.E.T. high conductivity source/drain layer on a substrate, forming a groove in the layer produced to divide the layer into two parts, producing an F.E.T. gate layer in the groove to bridge the two layers and producing further layers forming light detecting or generating means.
Claim 12
Dependent Claim
40 words
A method as claimed in claim 9 in which the F.E.T. high conductivity source/drain layer is formed by a first epitaxial growth step and the F.E.T. gate layer and the further layers are formed by a second epitaxial growth step.
References Cited (Backward Citations)
No citation records indexed.
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