Patent EP0066767A2 successfully refreshed from Google Patents.
EP0066767A2
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EP
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Solid state image sensor
Assignee: Toshiba Corp
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Filing: 1982-05-24
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Granted: —
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Expires: 2002-05-24
Abstract
Abstract A solid state image sensor with a plurality of cells comprising a photoelectric converting film (31) formed on a semiconductor substrate (21) for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas (22 1 , 22 1 , ...) for storing said signal charge formed in said substrate (21), signal charge read out areas (23 1 , 23 1 , ...) for reading out said signal charge from said storage area (22 1 , 22 2 , ...), conductor electrodes (30 1 , 30 2 , ...; 100A1, 100A2, 100A3, 100A4, ...;100B1, 100B2, 100B3, 100B4, ...) for making said photoelectric converting film (31) electrically contact with said signal charge storage areas (22 1 , 22 2 , ...) to lead said signal charge from said photoelectric converting film (31) to said storage areas (22 1 , 22 2 , ...), and series (100A, 100B) of said conductor electrodes (100A1, 100A2, 100A3, 100A4, ...; 100B1, 100B2, 100B3, 100B4, ...) arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by ½ of the length of one electrode one from the other as viewed in the column direction.
Inventors
- 👤 Nozomu Harada
- 👤 Yukio Endo
- 👤 Okio Yoshida
- 👤 Yoshiyuki Matsunaga
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-26 04:50
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H04; H04N; H04N25/00; H04N25/10; H04N25/11; H10F39/192
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
206 words
A solid state image sensor with a plurality of cells comprising: a photoelectric converting film (31) formed on a semiconductor substrate (21) for photoelectrically converting incoming light rays to generate signal charge; signal charge storage areas (22 1 , 22 2 , ...) for storing said signal charge formed in said substrate (21); signal charge read out areas (23 1 , 23 2 , ...) for reading out said signal charge from said storage area (22 1 , 22 2 , ...); conductor electrodes (100A1 - 100A4, 100B1 - 100B4, ...) for making said photoelectric converting film (31) electrically contact with said signal charge storage areas (22 1 , 22 2 , ...) to lead said signal charge from said photoelectric converting film (31) to said storage areas ( 22 1, 22 2 , ...); and series (100A, 100B, ...) of said conductor electrodes (100A1 - 100A4, 100B1 - 100B4, ...) arranged along at least two or more row lines in a matrix of said conductor electrodes, characterized in that said series (100A, 100B, ...) of the conductor electrodes (100A1 - 100A4, 100B1 - 100B4, ...) are displaced in the row direction by a given distance one from the other as viewed in the column direction.
Claim 2
Dependent Claim
206 words
A solid state image sensor with a plurality of cells comprising: a photoelectric converting film (31) formed on a semiconductor substrate (21) for photoelectrically converting incoming light rays to generate signal charge; signal charge storage areas (22 1 , 22 2 , ...) for storing said signal charge formed in said substrate (21); signal charge read out areas (23 1 , 23 2 , ...) for reading out said signal charge from said storage area (22 1 , 22 2 , ...); conductor electrodes (100A1 - 100A4, 100B1 - 100B4, ...) for making said photoelectric converting film (31) electrically contact with said signal charge storage areas (22 1 , 22 2 , ...) to lead said signal charge from said photoelectric converting film (31) to said storage areas ( 22 1, 22 2 , ...); and series (100A, 100B, ...) of said conductor electrodes (100A1 - 100A4, 100B1 - 100B4, ...) arranged along at least two or more row lines in a matrix of said conductor electrodes, characterized in that said series (100A, 100B, ...) of the conductor electrodes (100A1 - 100A4, 100B1 - 100B4, ...) are displaced in the row direction by a given distance one from the other as viewed in the column direction.
Claim 3
Dependent Claim
40 words
A solid state image sensor according to claim 1, characterized in that said conductor electrodes (100A1 - 100A4, 100B1 - 100B4; 200A1 - 200A4, 200B1 - 200B4) are made up of two series (100A, 100B; 200A, 200B) of conductor electrodes.
Claim 4
Dependent Claim
62 words
A solid state image sensor according to claim 1, characterized in that said conductor electrodes (100A1 - 100A4, 100B1 - 100B4, 110A1 - 110A4, 110B1 - 110B4) are made up of four series (100A, 100B, 110A, 110B) of conductor electrodes, and two adjacent series of said conductor electrodes form one unit electrodes, and said unit electrodes are displaced by a given distance.
Claim 5
Dependent Claim
33 words
A solid state image sensor according to claim 2 or 3, characterized in that the distance of said displacement is 1/2 of a length of one electrode as viewed in the column direction.
Claim 6
Dependent Claim
79 words
A solid state image sensor according to claim 1, characterized in that said conductor electrodes (120Al - 120A4, 120B1 - 120B4, 130A1 - 130A4, 130B1 - 130B4, 140A1 - 140A4, 140B1 - 140B4, ...) are made up of six or more series (120A, 120B, 130A, 130B, 140A; 140B, ...) of conductor electrodes, the adjacent two series of said conductor electrodes form a unit electrode, and said unit electrodes are displaced by given distance or distances in the row direction.
Claim 7
Dependent Claim
47 words
A solid state image sensor according to any one of claims 1 to 5, characterized in that color filtering means (CylA, CylB, Cy2A, Cy2B, YelA, YelB, Ye2A, Ye2B, Ye3A, Ye3B, ...) allowing a specific color or colors to pass therethrough are selectively arranged on said conductor electrodes.
Claim 8
Dependent Claim
67 words
A solid state image sensor according to any one of claims 1 to 5, characterized in that color filtering means (CylA, CylB, Cy2A, Cy2B, YelA, YelB, Ye2A, Ye2B, Ye3A, Ye3B, ...) allowing a specific color or colors to pass therethrough are disposed on said conductor electrodes located in a series fashion in a specific direction between the vertical and horizontal directions, which is caused by said displacement.
Claim 9
Dependent Claim
83 words
A solid state image sensor according to claim 7, characterized in that transparent filtering means (W1A, W1B, W2A, W2B, W3A, W3B, W4A, W4B) allowing all the colors to pass is disposed on one of the series of said conductor electrodes sandwiching said series of conductor electrodes arranged in said specific direction, while color filtering means (CylA, CylB, Cy2A, Cy2B, YelA, YelB, Ye2A, Ye2B, Ye3A, Ye3B, ...) allowing a specific color or colors to pass are disposed on the other series of conductor electrodes.
References Cited (Backward Citations)
No citation records indexed.
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