Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
60 words
A semiconductor laser device comprising a plurality active regions (3,5,7,13); cladding layers (2,4,6,8,14) sandwiching the active regions; and means (9,9',10,10',11, 22,23) for injecting current into the active regions to cause laser action therein; characterised in that at least two active regions are in the form of layers (3,5,7) vertically arrayed one over another, with a cladding layer (4,6) between them.
Claim 2
Dependent Claim
60 words
A semiconductor laser device comprising a plurality active regions (3,5,7,13); cladding layers (2,4,6,8,14) sandwiching the active regions; and means (9,9',10,10',11, 22,23) for injecting current into the active regions to cause laser action therein; characterised in that at least two active regions are in the form of layers (3,5,7) vertically arrayed one over another, with a cladding layer (4,6) between them.
Claim 3
Dependent Claim
183 words
A semiconductor laser device as defined in claim 1 comprising a laminated structure in which said active regions are a plurality of first semiconductor layers (3,5,7,13) having substantially the same composition as each other stacked so as to be sandwiched between second semiconductor layers (2,4,6,8,14) which are wider in band gap, and which are lower in refractive index, than those of said first semiconductor layers; a third semiconductor layer (9,9') which is disposed in contact with at least one of the side faces of said laminated structure parallel to the direction of travel of a laser beam, the third semiconductor layer being not narrower in band gap and not higher in refractive index than said first semiconductor layers and not having the same conductivity type as, at least, that of said first semiconductor layers; said current injection means (10,10',11,22,23) being arranged to inject current into an interface between said first semiconductor layers (3,5,7,13) and said third semiconductor layer (9,9') disposed on the side face of said laminated structure; the device including means (12,12') to act as an optical resonator for the laser beam.
Claim 4
Dependent Claim
41 words
A semiconductor laser device as defined in claim 1, wherein there are said third semiconductor layers (9,9') disposed on both the opposing side faces of said laminated structure (2 - 8) parallel to the direction of travel of the laser beam.
Claim 5
Dependent Claim
44 words
A semiconductor laser device as defined in claim 2 or 3, wherein facets (16,16') of a region emitting the laser beam in said laminated structure (2 - 8) have a conductivity type opposite to that of the other part (15) of said laminated structure.
Claim 6
Dependent Claim
34 words
A semiconductor laser device as defined in any of claims 2 to 4, wherein said laminated structure (2 - 8) and said third semiconductor layer (9,9') are formed on a semi-insulating semiconductor substrate (1).
Claim 7
Dependent Claim
35 words
A semiconductor laser device as defined in any of claims 2 to 4, wherein at least said laminated structure (2 - 8) is disposed on a semi-insulating semiconductor layer (20) over a semiconductor substrate (31).