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Patent EP0064805A2 successfully refreshed from Google Patents.
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EP0064805A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of producing a metallic thin film on a semiconductor body

Assignee: Fujitsu Ltd
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Filing: 1982-03-23
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Granted: —
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Expires: 2002-03-23
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Abstract

Abstract An aluminum thin film for semiconductor devices has been heretofore formed by vacuum deposition. However, because the aluminum to be deposited on a semiconductor substrate by vacuum deposition has a directional property of growth, breakage of the resultant aluminum wiring often occurred at a step of the substrate. The present invention provides a method for forming the aluminum thin film by chemical vapor deposition, in which AlCl 3 is reacted with molten aluminum (46) to form AICI, and the produced AICI is decomposed into Al and AlCl 3 in the vicinity of the semiconductor substrate, i.e. wafer (47), maintained at a low temperature so as to cause the produced Al to be grown on the wafer (47). In accordance with the present invention, the aluminum thin film having a uniform thickness can be formed.

Inventors

  • 👤 Takashi Ito

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-31 14:21
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062; C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/12; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10P; H10P14/00; H10P14/40; H10P14/412

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 69 words
A method of producing an aluminum thin film on a surface of a semiconductor device, wherein a monovalent aluminum halide in the vapour phase is caused to decompose, into a trivalent aluminum halide together with metallic aluminum, in the vicinity of the said surface, which surface is maintained at a temperature below the melting point of the metallic aluminum, so that said metallic aluminum is deposited on that surface.
Claim 2
Independent Claim 69 words
A method of producing an aluminum thin film on a surface of a semiconductor device, wherein a monovalent aluminum halide in the vapour phase is caused to decompose, into a trivalent aluminum halide together with metallic aluminum, in the vicinity of the said surface, which surface is maintained at a temperature below the melting point of the metallic aluminum, so that said metallic aluminum is deposited on that surface.
Claim 3
Dependent Claim 17 words
A method as claimed in claim 1, wherein a sub-atmospheric pressure is maintained in the said vicinity.
Claim 4
Dependent Claim 24 words
3d A method as claimed in claim 1 or 2, wherein the decomposition of the aluminum halide is brought about in a hydrogen atmosphere.
Claim 5
Independent Claim 18 words
A method as claimed in any preceding claim, wherein the said temperature is substantially 400 C or less.
Claim 6
Independent Claim 27 words
A method as claimed in any preceding claim, wherein the decomposition is brought about by imposing on the aluminum halide a temperature drop of 300°C or more.
Claim 7
Independent Claim 28 words
A method as claimed in any preceding claim, wherein the decomposition is brought about in a horizontal-type reaction tube, through which the aluminum halide is made to flow.
Claim 8
Dependent Claim 39 words
A method as claimed in claim 6, wherein the said surface is disposed, in the said reaction tube, so that a main plane of that surface extends in the direction of flow of the aluminum halide through the tube.

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