EP0063273A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Discharge system for plasma processing
Assignee: Applied Biosystems Inc
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Filing: 1982-03-31
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Granted: —
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Expires: 2002-03-31
Abstract
Abstract An apparatus (10) for the downstream etching of semiconductor devices (31) which utilizes internal electrodes (12, 18) while avoiding the formation of loosely bonded particles in the discharge chamber (26).
Inventors
- 👤 Alan R. Reinberg
- 👤 George N. Steinberg
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 07:57
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H01J37/32357
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
88 words
. An apparatus for the downstream etching of semiconductor devices, comprising in combination; an etching chamber containing the semiconductor device to be etched, a tube having a discharge chamber connected between a source of etching gas and said etching chamber, . said tube including a pair of electrodes disposed therein made of a material which chemically reacts with the plasma products created when the etching gases in said tube are excited to form an etching plasma whereby the etching plasma entering said etching chamber is substantially particle free.
Claim 2
Dependent Claim
88 words
. An apparatus for the downstream etching of semiconductor devices, comprising in combination; an etching chamber containing the semiconductor device to be etched, a tube having a discharge chamber connected between a source of etching gas and said etching chamber, . said tube including a pair of electrodes disposed therein made of a material which chemically reacts with the plasma products created when the etching gases in said tube are excited to form an etching plasma whereby the etching plasma entering said etching chamber is substantially particle free.
Claim 3
Dependent Claim
17 words
An apparatus according to claim 1 wherein said electrodes are disposed at opposite ends of said tube.
Claim 4
Dependent Claim
13 words
An apparatus according to claim 2 wherein said electrodes are made of graphite.
Claim 5
Dependent Claim
13 words
An apparatus according to claim 2 wherein said electrodes are made of silicon.
Claim 6
Dependent Claim
14 words
An apparatus according to claim 4 wherein said electrodes are made of silicon carbide.
Claim 7
Dependent Claim
28 words
An apparatus according to claim 2 further including, a low frequency power source connected to said electrodes for creating a plasma of said etching gas in said tube.
Claim 8
Dependent Claim
19 words
An apparatus according to claim 6 wherein said low frequency power source is a 60 hertz, 1,000 volt source.
Claim 9
Dependent Claim
27 words
An apparatus according to claim 2 further including, a d.c. power source connected to said electrodes for creating a plasma of said etching gas in said tube.
Claim 10
Dependent Claim
17 words
An apparatus according to claim 8 wherein said d.c. power source provides approximately 300 watts of power.
Claim 11
Independent Claim
33 words
An apparatus according to claims 1, 2, 3, 4, 5, 6, 7, 8 or 9 further including pump means connected to said etching chamber for evacuating said etching chamber at a predetermined rate.
Claim 12
Dependent Claim
31 words
A apparatus according to claim 10 wherein the etching gas is 1 part CF 4 to 3 or 4 parts 0 2 when photoresist is being stripped from the semiconductor device.
Claim 13
Dependent Claim
25 words
An apparatus according to claim 10 wherein the etching gases are 3 parts CF 4 and one part 0 2 when silicon is being etched.
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