Patent EP0062546B1 successfully refreshed from Google Patents.
EP0062546B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Output circuit
Assignee: NEC Corp
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Filing: 1982-04-08
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Granted: 1986-06-11
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Expires: 2002-04-08
Abstract
No abstract record available.
Inventors
- 👤 Manabu C/O Nippon Electric Comp. Ltd. Ando
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 10:48
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/003; H03K19/00315
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
221 words
An output circuit comprising a first terminal (4) for connection to a first potential, a second terminal for connection to a second potential, an output terminal (5), a first insulated gate field effect transistor (Q 1 ) connected between said first terminal and said output terminal and having a gate supplied with a first signal, a second insulated gate field effect transistor (Q 2 ) connected between said second terminal and said output terminal (5) and having a gate supplied with a second signal having an opposite phase to said first signal, and means (Q 3 , Q 4 ) responsive to a control signal for forcibly clamping the potentials at the gates of said first and second field effect transistors (Q 1 , Q 2 ) to said second potential, characterised in that a third field effect transistor (Q 5 ) is inserted between said first insulated gate field effect transistor (Q 1 ) and said first terminal, (4), said third field effect transistor (Q 5 ) having a gate supplied with a potential that causes said third field effect transistor (Q 5 ) to have a high internal resistance at least when said clamping means clamps the potentials at the gates of said first and second field effect transistors (Q 1 , Q 2 ) to said second potential.
Claim 2
Dependent Claim
221 words
An output circuit comprising a first terminal (4) for connection to a first potential, a second terminal for connection to a second potential, an output terminal (5), a first insulated gate field effect transistor (Q 1 ) connected between said first terminal and said output terminal and having a gate supplied with a first signal, a second insulated gate field effect transistor (Q 2 ) connected between said second terminal and said output terminal (5) and having a gate supplied with a second signal having an opposite phase to said first signal, and means (Q 3 , Q 4 ) responsive to a control signal for forcibly clamping the potentials at the gates of said first and second field effect transistors (Q 1 , Q 2 ) to said second potential, characterised in that a third field effect transistor (Q 5 ) is inserted between said first insulated gate field effect transistor (Q 1 ) and said first terminal, (4), said third field effect transistor (Q 5 ) having a gate supplied with a potential that causes said third field effect transistor (Q 5 ) to have a high internal resistance at least when said clamping means clamps the potentials at the gates of said first and second field effect transistors (Q 1 , Q 2 ) to said second potential.
Claim 3
Dependent Claim
85 words
The circuit according to claim 1, in which said clamping means includes a fourth field effect transistor (Q 3 ) coupled between the gate of said first insulated gate field effect transistor (Q 1 ) and said second terminal and having a gate supplied with said control signal, and a fifth field effect transistor (Q 4 ) coupled between the gate of said second insulated gate field effect transistor (Q 2 ) and said second terminal and having a gate supplied with said control signal.
Claim 4
Dependent Claim
36 words
The circuit according to claim 1, characterised by an inverter circuit (41, 43) for supplying an inversion of said control signal to the gate of said third field effect transistor (Q 51 , Q 52 ).
Claim 5
Dependent Claim
24 words
The circuit according to claim 1, characterised in that said third field effect transistor (Q s ) in a depletion type field effect transistor.
Claim 6
Dependent Claim
39 words
The circuit according to claim 1, characterised by means for supplying the gate of said third field effect transistor (Q S ) with a potential at the gate of said first insulated gate field effect transistor (Q i ).
Claim 7
Dependent Claim
24 words
The circuit according to claim 1, characterised in that said output terminal is connected through a bus line (DB) to an input/output terminal (I/O).
Claim 8
Dependent Claim
28 words
The circuit according to claim 4, characterised in that said first and second field effect transistors (Q i , Q 2 ) are enhancement type field effect transistors.
References Cited (Backward Citations)
No citation records indexed.
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