Patent EP0062079A1 successfully refreshed from Google Patents.
EP0062079A1
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Thin silicon film and process for preparing same
Assignee: Tonen General Sekiyu KK
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Filing: 1981-10-15
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Granted: —
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Expires: 2001-10-15
Abstract
Abstract A thin silicon film comprising mainly silicon atoms and containing at least one element selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen, and impurity elements, with fine crystalline particles being present in an amorphous layer. This thin silicon film is prepared by using a silane (SiH,) gas, a halogenated silane [SiH 0-3 X 4-1 (X: halogen atom)] gas, or a mixture gas of the two or more as a starting gas, mixing it with a dopant gas, and forming a film on an arbitrary substrate under plasma atmosphere. In this occasion, the aforesaid mixture gas is diluted with a rare gas such as helium, neon or argon or a hydrogen gas in a proportion of about 1:1 or more based on the mixture gas for the purpose of fully controlling the film-forming velocity and forming both a crystalline layer and an amorphous layer, and the film is formed by applying an electric power giving a plasma discharge power density of about 0.2 W/cm 2 or more.
Inventors
- 👤 Shigeru Electr Lab Agen Ind Sci & Techn. Iijima
- 👤 Kazunobu Electr Lab Agen Ind Sci & Techn. Tanaka
- 👤 Akihisa Electr Lab Agen Ind Sci & Techn. Matsuda
- 👤 Mitsuo Matsumura
- 👤 Hideo Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 06:17
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/40; C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; H10D62/80; H10D62/83; H10D62/834; H10F; H10F71/00; H10F71/10; H10F71/103; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2922; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3444; H10P14/3451; H10P14/3452; H10P14/3454; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02P; Y02P70/00; Y02P70/50; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12528
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
35 words
Silicon thin film composed of primarily silicon atoms, at least one element selected from a group including fluorine, chlorine, bromine, iodine and hydrogen, and impurity element, wherein microcrystalline grains are interspersed in the amorphous layer.
Claim 2
Dependent Claim
35 words
Silicon thin film composed of primarily silicon atoms, at least one element selected from a group including fluorine, chlorine, bromine, iodine and hydrogen, and impurity element, wherein microcrystalline grains are interspersed in the amorphous layer.
Claim 3
Dependent Claim
24 words
Thin film according to claim 1, wherein the electrical conductivity of said film is higher than about 10 -3 Ω -1 cm -1 .
Claim 4
Dependent Claim
19 words
Thin film according to claim 1, wherein the optical band gap of said film is higher than 1.3 eV.
Claim 5
Dependent Claim
23 words
Thin film according to claim 1, wherein the microcrystalline substance has an average grain diameter of about 30 R to about 500 Å.
Claim 6
Dependent Claim
27 words
Thin film according to claim l, wherein the impurity element includes an element selected from the Group V of the Periodic Table, such as phosphorus, arsenic, etc.
Claim 7
Dependent Claim
27 words
Thin film according to claim 1, wherein the impurity element includes an element selected from the Group III of the Periodic Table, such as boron, aluminium, etc.
Claim 8
Dependent Claim
25 words
Thin film according to claim 1, wherein the activation energy on the basis of the electrical conductivity of said film is below about 0.2 eV.
Claim 9
Dependent Claim
126 words
Method of preparing a silicon thin film on a substrate under the plasma atmosphere using anyone of silane SiB 4 or halogenated silane SiH 0-3 X 4-1 wherein X represents halogen element, or a combination of two or more thereof, as a raw material gas, and a dopant gas mixed with the raw material gas, said method comprising: diluting said mixed gas with rare gas such as helium, neon, argon, etc. or hydrogen in a ratio of the diluting gas to the raw material gas higher than 1:1, in order to control the film forming rate adequately enough to produce a layer including mixed crystalline and amorphous substances; and applying an electric power of a plasma discharge power density higher than about 0.2 W/cm 2 .
Claim 10
Dependent Claim
126 words
Method of preparing a silicon thin film on a substrate under the plasma atmosphere using anyone of silane SiB 4 or halogenated silane SiH 0-3 X 4-1 wherein X represents halogen element, or a combination of two or more thereof, as a raw material gas, and a dopant gas mixed with the raw material gas, said method comprising: diluting said mixed gas with rare gas such as helium, neon, argon, etc. or hydrogen in a ratio of the diluting gas to the raw material gas higher than 1:1, in order to control the film forming rate adequately enough to produce a layer including mixed crystalline and amorphous substances; and applying an electric power of a plasma discharge power density higher than about 0.2 W/cm 2 .
Claim 11
Dependent Claim
43 words
Method according to claim 8, wherein said dopant gas includes a gas consisting of an element selected from the Group III of the Periodic Table, such as boron aluminium, etc. or compounds thereof, and the resulting silicon thin film is of P type.
Claim 12
Dependent Claim
43 words
Method according to claim 8, wherein said dopant gas includes a gas consisting of an element selected from the Group V of the Periodic Table, such as phosphorus, arsenic etc. or compounds thereof, and the resulting silicon thin film is of N type.
Claim 13
Dependent Claim
118 words
ll. Method of preparing a silicon thin film on a substrate under the plasma atmosphere using as a raw material gas anyone of silane SiH 4 or halogenated silane SiH 0-3 X 4-1 wherein X represents, halogen element, or a combination of two or more thereof, said method comprising: diluting said raw material gas with rare gas such as helium, neon, argon, etc. or hydrogen in a ratio of the diluting gas to the raw material gas higher than 1:1, in order to control the film forming rate adequately enough to produce a layer including mixed crystalline and amorphous substances; and applying an electric power of a plasma discharge power density higher than about 0.2 W/cm 2 .
Claim 14
Dependent Claim
118 words
ll. Method of preparing a silicon thin film on a substrate under the plasma atmosphere using as a raw material gas anyone of silane SiH 4 or halogenated silane SiH 0-3 X 4-1 wherein X represents, halogen element, or a combination of two or more thereof, said method comprising: diluting said raw material gas with rare gas such as helium, neon, argon, etc. or hydrogen in a ratio of the diluting gas to the raw material gas higher than 1:1, in order to control the film forming rate adequately enough to produce a layer including mixed crystalline and amorphous substances; and applying an electric power of a plasma discharge power density higher than about 0.2 W/cm 2 .
References Cited (Backward Citations)
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