Patent EP0060635A2 successfully refreshed from Google Patents.
EP0060635A2
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EP
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A semiconductor integrated circuit device including a protection element
Assignee: Hitachi Ltd
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Filing: 1982-02-25
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Granted: —
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Expires: 2002-02-25
Abstract
Abstract A semiconductor integrated circuit device including a vertical type MOSFET and a gate protection element for the MOSFET is disclosed in which the vertical type MOSFET is made up of a silicon layer (1) of n-type conductivity formed on an n +- type silicon substrate (13), a base region (10) of p-type conductivity formed in the surface of the silicon layer (1) of n-type conductivity, an n +- type source region (11) provided in the base region (10), and a gate electrode (9) formed on a portion of the base region (10) through a gate insulating film (2), and uses the silicon substrate (13) as the drain, and in which the gate protection element is formed of a polycrystalline silicon layer (4,5,6) which is provided on the base region (10) through an insulating film (3) and has an n + -p-n + structure.
Inventors
- 👤 Isao Yoshida
- 👤 Takeaki Okabe
- 👤 Mineo Katsueda
- 👤 Minoru Nagata
- 👤 Toshiaki Masuhara
- 👤 Kazutoshi Ashikawa
- 👤 Hideaki Kato
- 👤 Mitsuo Ito
- 👤 Shigeo Ohtaka
- 👤 Osamu Minato
- 👤 Yoshio Sakai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 14:30
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/665; H10D8/00; H10D84/00; H10D84/101; H10D84/141; H10D84/148; H10D88/00; H10D89/00; H10D89/60; H10D89/601; H10D89/611
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
145 words
A semiconductor integrated circuit device comprising: a semiconductor body (1); a semiconductor element (Q l , 30, 31) formed on said semiconductor body (1); and a protection element (16, 17, 18, 38, 39, 40, 42) for protecting said semiconductor element, said protection element being formed in a semiconductor layer (4, 5, 6) provided on an insulating film (3) situated on said semiconductor body (1), said protection element including a pair of highly doped regions (5, 6) and a low doped region (4) in such a manner that said low doped region is sandwiched between said highly doped regions and that a pn junction is formed between said low doped region and at least one of said. highly doped regions, the number of impurity atoms per unit area at said low doped region being in a range from 10 13 to 10 15 cm- 2 .
Claim 2
Dependent Claim
145 words
A semiconductor integrated circuit device comprising: a semiconductor body (1); a semiconductor element (Q l , 30, 31) formed on said semiconductor body (1); and a protection element (16, 17, 18, 38, 39, 40, 42) for protecting said semiconductor element, said protection element being formed in a semiconductor layer (4, 5, 6) provided on an insulating film (3) situated on said semiconductor body (1), said protection element including a pair of highly doped regions (5, 6) and a low doped region (4) in such a manner that said low doped region is sandwiched between said highly doped regions and that a pn junction is formed between said low doped region and at least one of said. highly doped regions, the number of impurity atoms per unit area at said low doped region being in a range from 10 13 to 10 15 cm- 2 .
Claim 3
Dependent Claim
40 words
A semiconductor integrared circuit device according to Claim 1, wherein said semiconductor element is an MOSFET, and the gate (9) and the source (11) of said MOSFET are connected to said highly doped regions (5, 6) of said protection element.
Claim 4
Dependent Claim
42 words
A semiconductor integrated circuit device according to Claim 2, wherein said MOSFET is a vertical type MOSFET, and a base region (10) of said vertical type MOSFET is extended in a surface region of said semiconductor body (1) underlying said protection element.
Claim 5
Dependent Claim
42 words
A semiconductor integrated circuit device according to Claim 1, 2 or 3, wherein said highly doped regions (5, 6) are equal in conductivity type, and said low doped region (4) is opposite in conductivity type to said highly doped regions (5, 6).
Claim 6
Dependent Claim
47 words
A semiconductor integrated circuit device according to Claim 1, 2 or 3, wherein said highly doped regions (5, 6) are opposite in conductivity type to each other, and said low doped region (4) is equal in conductivity type to one of said highly doped regions (5, 6).
Claim 7
Dependent Claim
23 words
A semiconductor integrated circuit device according to Claim 1, wherein said semiconductor layer (4, 5, 6) is made of a polycrystalline semiconductive material.
References Cited (Backward Citations)
No citation records indexed.
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