EP0058604A1
Expired / Lapsed
EP
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Method for manufacturing a semiconductor structure having reduced lateral spacing between buried regions
Assignee: Fairchild Semiconductor Corp
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Filing: 1982-02-09
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Granted: —
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Expires: 2002-02-09
Abstract
Abstract The lateral spacing between buried regions separated by oxide-isolation regions in a semiconductor structure is reduced to as little as one micron by performing a deep implantation of ions of the conductivity type opposite to that of the buried regions generally into portions of the substrate below the sites where the oxide-isolation regions are formed.
Inventors
- 👤 Robert E. Caldwell
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 08:43
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0121; H10W10/0124; H10W10/0125; H10W10/0126; H10W10/10; H10W10/13; H10W15/00; H10W15/01
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
111 words
A method for manufacturing a semiconductor structure characterized by the steps of: providing a semiconductor substrate of a first conductivity type having an electrically insulating layer along an upper surface of the substrate; forming two holes laterally spaced apart from each other through the insulating layer down to the upper surface; introducing a semiconductor dopant of a second conductivity type opposite to the first conductivity type through the holes into the substrate to form two doped regions of the second conductivity type spaced laterally apart from each other; and implanting ions of a chemical species of the first conductivity type through the upper surface into the substrate at a selected dosage.
Claim 2
Independent Claim
111 words
A method for manufacturing a semiconductor structure characterized by the steps of: providing a semiconductor substrate of a first conductivity type having an electrically insulating layer along an upper surface of the substrate; forming two holes laterally spaced apart from each other through the insulating layer down to the upper surface; introducing a semiconductor dopant of a second conductivity type opposite to the first conductivity type through the holes into the substrate to form two doped regions of the second conductivity type spaced laterally apart from each other; and implanting ions of a chemical species of the first conductivity type through the upper surface into the substrate at a selected dosage.
Claim 3
Dependent Claim
17 words
The method of Claim 1 characterized by the step of removing the remainder of the insulating layer.
Claim 4
Dependent Claim
75 words
The method of Claim 2 characterized by the steps of: forming an epitaxial layer on the upper surface; forming a groove in a portion of the epitaxial layer overlying the portion of the substrate between the doped regions; and exposing the surface area of the epitaxial layer exposed by the groove to a selected oxidizing environment to form an electrically insulating oxidized region extending down into a portion of the substrate between the doped regions.
Claim 5
Dependent Claim
118 words
The method of Claim 3 characterized in that ions of the chemical species implanted in the substrate diffuse downward during the step of exposing to define a more highly doped region of the first conductivity type between the doped regions and adjacent to the oxidized region, the more highly doped region having a net dopant concentration type greater than the net dopant concentration of an adjacent portion of the first conductivity type of the substrate and the selected dosage being sufficiently high that no inversion into a region of the second conductivity type occurs in the more highly doped region, whereby the more highly doped and oxidized regions in combination electrically isolate the doped regions from each other.
Claim 6
Dependent Claim
58 words
The method of Claim 4 characterized in that ions of the chemical species implanted in the substrate further diffuse upward and downward within the doped regions during the step of exposing, the selected dosage not being high enough to cause any portion of either doped region to be of the first conductivity type after the step of oxidizing.
Claim 7
Dependent Claim
51 words
The method of Claim 5 characterized by: the step of pre-depositing a semiconductor dopant of the first conductivity type to a shallow depth in the surface area of the epitaxial layer exposed by the groove, said step being performed between the steps of forming a groove and exposing the surface area.
Claim 8
Dependent Claim
40 words
The method of Claim 5 or 6 characterized in that the net dopant concentration in the more highly doped region is approximately in the range of 5 x 10 16 atoms/centimeter 3 to 5 x 10 17 atoms/centimeter 3 .
Claim 9
Dependent Claim
20 words
The method of Claim 7 characterized in that the first conductivity type is P-type and the chemical species is boron.
Claim 10
Dependent Claim
12 words
The method of Claim 8 characterized in that the substrate comprises silicon.
References Cited (Backward Citations)
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