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Patent EP0058566A2 successfully refreshed from Google Patents.
EP0058566A2
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EP
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Process for producing a semiconductor device using a diffusion step
Assignee: Fujitsu Ltd
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Filing: 1982-02-17
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Granted: —
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Expires: 2002-02-17
Abstract
Abstract In a method of manufacturing a semiconductor device first and second doped regions (15a, 15b) are formed in the surface of a semiconductor substrate (11) and an epitaxial layer of semiconductor material is formed on the surface of the substrate to cover the two regions. The epitaxial layer is irradiated (L) selectively in the vicinity of the first doped region (15a) so as to bring about controlled diffusion of dopant into the epitaxial layer from the first doped region (15a) preferentially as compared with the second doped region (15b).
Inventors
- 👤 Junji Sakurai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 09:03
CPC Classifications
H; H10; H10W; H10W15/00; H10P; H10P32/00; H10P32/10; H10P32/15; H10P34/00; H10P34/40; H10P34/42; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/092; Y10S148/093
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
94 words
A method of manufacturing a semiconductor device, wherein first and second doped regions (15a,15b) are formed in a semiconductor substrate (11) at a main surface thereof, whereafter a layer of semiconductor material is formed on the said main surface to cover the said doped regions, characterised in that the surface of the said layer is irradiated (L) selectively in the vicinity of the first doped region (15a) so as to bring about diffusion of dopant into the said layer from the first doped region (15a) preferentially as compared with the second doped region (15b).
Claim 2
Independent Claim
94 words
A method of manufacturing a semiconductor device, wherein first and second doped regions (15a,15b) are formed in a semiconductor substrate (11) at a main surface thereof, whereafter a layer of semiconductor material is formed on the said main surface to cover the said doped regions, characterised in that the surface of the said layer is irradiated (L) selectively in the vicinity of the first doped region (15a) so as to bring about diffusion of dopant into the said layer from the first doped region (15a) preferentially as compared with the second doped region (15b).
Claim 3
Dependent Claim
20 words
A method as claimed in claim 1, wherein the said semiconductor substrate comprises a silicon.wafer of a first conductivity type.
Claim 4
Dependent Claim
15 words
A method as claimed in claim 2, wherein the said first conductivity type is P-type.
Claim 5
Dependent Claim
37 words
A method as claimed in claim 1, wherein the said semiconductor substrate is of a first conductivity type and the said doped regions are of a second conductivity type which is opposite to said first conductivity type.
Claim 6
Dependent Claim
14 words
A method as claimed in claim 4,wherein the said second conductivity type is N-type.
Claim 7
Independent Claim
46 words
A method as claimed in any preceding claim, wherein the irradiation is carried out by means of an energy beam directed onto the surface of the said layer - and rendered selective in its effects by means of a selectively formed masking film on that surface.
Claim 8
Independent Claim
33 words
A method as claimed in any one of claims 1 to 5, wherein said selective energy irradiation is carried out by selectively scanning an energy beam over the surface of the said layer.
Claim 9
Independent Claim
20 words
A method as claimed in any preceding claim, wherein the said dopant comprises antimony (Sb), arsenic (As), or phosphorus (P).
Claim 10
Independent Claim
15 words
A method as claimed in any preceding claim, wherein the said layer is formed epitaxially.
References Cited (Backward Citations)
No citation records indexed.
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