Field effect transistor, normally in "off" position, having a short switching time

Abstract

Abstract The invention relates to field effect transistors operating at high frequency, and which are off in the absence of a biasing voltage at the gate. In these transistors, the channel between source and drain consists of a layer of high-mobility electrons at the interface of a heterojunction between a semiconductor material having a wide forbidden band and a material having a narrower forbidden band, but the same crystalline mesh parameter, the composition, the doping and the thickness of the layers being chosen so that the transistor is off under zero bias. Application to microwave devices. <IMAGE>

Inventors

• 👤 Trong Linh Nuyen
• 👤 Daniel Delagebeaudeuf

Bibliographic Details