Patent EP0055459A1 successfully refreshed from Google Patents.
EP0055459A1
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EP
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Process for producing oxides using chemical vapour deposition
Assignee: Rikuun Electric co
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Filing: 1981-12-22
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Granted: —
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Expires: 2001-12-22
Abstract
Abstract A process for producing oxides using chemical vapour deposition (C.V.D.) wherein simple or double oxides are obtained in film-on-substrate or fine powder form by using one kind or two kinds or more of gaseous metal β-diketone complexes in conjunction with water vapour having bonded oxygen in a quantity more than equivalent sufficient for oxidizing a metal or metals contained in said complex or complexes.
Inventors
- 👤 Kiichiro Kamata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 13:36
CPC Classifications
C; C01; C01B; C01B13/00; C01B13/14; C01B13/20; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/403; C23C16/404; C23C16/405; C23C16/406; C23C16/407; C23C16/409; C01P; C01P2002/00; C01P2002/30; C01P2002/32; C01P2002/34; C01P2002/70; C01P2002/72; C01P2004/00; C01P2004/60; C01P2004/61; C01P2004/62; C01P2006/00; C01P2006/40
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
77 words
- 1 - A process for producing oxides using chemical vapour deposition which comprises forming an oxide film on a substrate by mixing one kind or two kinds or more of gaseous metal β-diketone complexes with water vapour having bonded oxygen in a quantity more than equivalent sufficient for oxidizing a metal or metals contained in said complex or complexes, with both carried in a carrier gas, and contacting the resulting mixed gas with said heated substrate.
Claim 2
Dependent Claim
76 words
- 2 - A process for producing oxides using chemical vapour deposition which comprises forming oxide fine powder by mixing one kind or two kinds or more of gaseous metal β-diketone complexes with water vapour having bonded oxygen in a quantity more than equivalent sufficient for oxidizing a metal or metals contained in said complex or complexes, with both carried in a carrier gas, and passing the resulting mixed gas through a heated electric tubular furnace.
Claim 3
Dependent Claim
56 words
- 3 - A process according to Claim 1 or Claim 2 wherein said metal β-diketone complex is represented by the general formula (I), (wherein M is a metal, and n is equal to the number of valences of the metal. R and R' are -CH 3 , -CF 3 , -C 4 H 9 ,
Claim 4
Dependent Claim
36 words
- A process according to Claim 1 or Claim 2 wherein said metal β-diketone complex is metal acetylacetone complex, metal dipivaloylmethane complex, metal hexafluoroacetylacetone complex, metal trifluoroacetylacetone complex, metal thenoyltrifluoro- acetone complex or metal furoyltrifluoroacetone complex.
Claim 5
Dependent Claim
39 words
- 5 - A process according to Claim 1 or Claim 2 wherein said metal β-diketone complex is tris(acetylacetonato)aluminum(III), bis (acetylactonato)magnesium(II), bis(acetylacetonato)zinc(II), bis(acetylacetonato)manganese(II), tetrakis(acetylacetonato) zirconium(IV), tris(dipivaloylmethane)yttrium(III), bis(themoyl- trifluoroacetonato)lead(II), bis(acetylacetonato)calcium(II), tris(dipivaloylmethane)europium(III), tris(acetylacetonato)iron (III), bis(acetylacetonato)cobalt(II), bis(acetylacetonato)nickel (II), bis(acetylacetonato)lithium(I) or tetrakis(acetylacetonato) thorium(IV).
Claim 6
Dependent Claim
19 words
- 6 - A process according to any preceding claim wherein said heating temperature is not less than 80°C.
Claim 7
Dependent Claim
36 words
- 7 - A process according to Claim 6 wherein said heating temperature is not less than 350°C. A process according to Claim 7 wherein said heating temperature is in a range of 80 - 350°C.
References Cited (Backward Citations)
EP0022349A1
Cited
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