pn Diode and process for its production

Abstract

Abstract A pn diode in which at least one layer (3) consisting of the same semiconductor material as the substrate is epitaxially deposited on a gallium arsenide or indium phosphide substrate (2) or on a similar substrate (2) made of binary, ternary or quaternary compound semiconductors which can be rendered semi-insulating by ion implantation, and in which p<+>-doped regions (12) are introduced into, or deposited on, the epitaxially deposited layer (2), and in which insulation regions (4) are introduced into said epitaxially deposited layer (2) by hydrogen implantation. The invention is applied in abrupt and hyperabrupt pn diodes. <IMAGE>

Inventors

• 👤 Jörg Dr. Ing. Müller

Bibliographic Details