Patent EP0054303A2 successfully refreshed from Google Patents.
EP0054303A2
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Semiconductor integrated circuit
Assignee: Panasonic Holdings Corp
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Filing: 1981-12-15
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Granted: —
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Expires: 2001-12-15
Abstract
Abstract In an integrated circuit comprising an IIL and a high frequency npn bipolar transistor which has a deep p - -type base region 45 for its inverted npn output transistors, circuit elements such as a resistor part R, a capacitor part C, a diode part D and an isolated crossing connection part Cr are provided with deep p - -type regions 54, 54', 65', 71 and 82 which are formed at the same time with the p - -type region 45 in the IIL, and thereby, reliability of the circuit elements as well as characteristic thereof are improved, thereby further improving manufacturing yields.
Inventors
- 👤 Toyoki Takemoto
- 👤 Haruyasu Yamada
- 👤 Tsutomu Fujita
- 👤 Tadao Komeda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 16:50
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/65; H10D1/00; H10D1/40; H10D1/43; H10D1/60; H10D1/62; H10D1/64; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10D84/611; H10D84/658
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
130 words
A semiconductor integrated circuit comprising: an integrated injection logic, a bipolar transistor, and at least one other electric circuit element formed on a semiconductor substrate having said integrated injection logic and said high frequency bipolar transistor thereon, characterized in that said other elecric circuit element comprises a deeper region of a first conductivity type and a lower impurity concentration, said deeper region having substantially the same depth as, the same conductivity type as and substantially the same impurity concentration as those of the base region of said integrated injection logic a shallower region of said first conductivity type and a higher impurity concentration having substantially the same depth as, the same conductivity type as and substantially the same impurity concentration as those of the base region of the bipolar transistor.
Claim 2
Dependent Claim
130 words
A semiconductor integrated circuit comprising: an integrated injection logic, a bipolar transistor, and at least one other electric circuit element formed on a semiconductor substrate having said integrated injection logic and said high frequency bipolar transistor thereon, characterized in that said other elecric circuit element comprises a deeper region of a first conductivity type and a lower impurity concentration, said deeper region having substantially the same depth as, the same conductivity type as and substantially the same impurity concentration as those of the base region of said integrated injection logic a shallower region of said first conductivity type and a higher impurity concentration having substantially the same depth as, the same conductivity type as and substantially the same impurity concentration as those of the base region of the bipolar transistor.
Claim 3
Dependent Claim
16 words
A semiconductor integrated circuit in accordance with claim 1, wherein said first conductivity type is p-type.
Claim 4
Dependent Claim
78 words
A semiconductor integrated circuit in accordance with claim. 1, wherein said other electric circuit element is a capacitor characterized in that said deeper region is formed in an island region of a second conductivity type opposite to said first conductivity type and said shallower region is formed in said deeper region, and comprises a shallow third region of said second conductivity type, said shallower region and said shallow third region forming a p-n junction for affording a capacitance.
Claim 5
Dependent Claim
24 words
A semiconductor integrated circuit in accordance with claim 3, wherein said shallow third region extends outwards said shallower region thereby contacting said deeper region.
Claim 6
Dependent Claim
59 words
A semiconductor integrated circuit in accordance with claim 3, wherein said other electric circuit element is a resistor characterized in that said shallower region is formed in an island region of second conductivity type opposite to said first conductivity type, said deeper region covers at least end parts of said shallower region, and said shallower region affording a resistance.
Claim 7
Dependent Claim
21 words
A semiconductor integrated circuit in accordance with claim 5, wherein said deeper region covers only end parts of said shallower region.
Claim 8
Dependent Claim
20 words
A semiconductor integrated circuit in accordance with claim 5, wherein said deeper region covers all parts of said shallower region.
Claim 9
Dependent Claim
83 words
A semiconductor integrated circuit in accordance with claim 1, wherein said other electric circuit element is an isolated crossing connection characterized in that said deeper region is formed in an island region of a second conductivity which is opposite to said first conductivity, and said shallower region is formed in said deeper region, and comprises therein a shallow third region of said second conductivity type and higher impurity concentration than said shallower region, at least said shallower region forming said isolated crossing connection.
Claim 10
Dependent Claim
53 words
A semiconductor integrated circuit in accordance with claim 8, which further comprises an insulation film formed on said shallow third region, a first conductor wiring formed on said insulation film, at least one other conductor wiring isolated from said first conductor wiring and connected to said shallower region and said shallow third region.
Claim 11
Dependent Claim
72 words
A semiconductor integrated circuit in accordance with claim 1, wherein said other electric circuit element is a diode characterized in that said deeper region is formed in an island region of a second conductivity type and said shallower region is formed in said deeper region, and comprises a shallow third region of said second conductivity type, said shallower region and said shallow third region forming a p-n junction for affording a rectification.
Claim 12
Dependent Claim
108 words
.11. A semiconductor integrated circuit including a resistor part comprising a high impurity region (55) formed in a semiconductor layer (43), said high impurity region having a first conductivity type which is opposite to a second conductivity type of said semiconductor layer (43), characterized in that said high impurity region (55) is covered at least at the end parts thereof by a low impurity region (54) having the conductivity type same as that of and a lower impurity concentration than that of said high impurity region, said low impurity region (54) having a depth deeper than said high impurity region (55) but shallower than said semiconductor layer (43).
Claim 13
Dependent Claim
108 words
.11. A semiconductor integrated circuit including a resistor part comprising a high impurity region (55) formed in a semiconductor layer (43), said high impurity region having a first conductivity type which is opposite to a second conductivity type of said semiconductor layer (43), characterized in that said high impurity region (55) is covered at least at the end parts thereof by a low impurity region (54) having the conductivity type same as that of and a lower impurity concentration than that of said high impurity region, said low impurity region (54) having a depth deeper than said high impurity region (55) but shallower than said semiconductor layer (43).
Claim 14
Dependent Claim
27 words
A semiconductor integrated circuit in accordance with claim 11, wherein said low impurity region (54) is formed only at end parts of said high impurity region (55).
Claim 15
Dependent Claim
26 words
A semiconductor integrated circuit in accordance with claim 11, wherein said low impurity region (54) is formed on all parts of said high impurity region (55).
Claim 16
Dependent Claim
85 words
A semiconductor integrated circuit in accordance with claim 11, wherein said high impurity region (55) is formed with substantially the same depth and substantially the same impurity concentration with those of the base region (51) of an npn transistor (Tr) in the integrated circuit, and said low impurity region (54) is formed with substantially the same depth and substantially the same impurity concentration with those of the base region (45) of an inverted npn transistors in said integrated injection logic (IIL) in the integrated circuit.
Claim 17
Dependent Claim
134 words
A semiconductor integrated circuit including a diode part comprising a high impurity region (72) formed in a semiconductor layer (43), said high impurity region having a first conductivity type which is opposite to a second conductivity type of said semiconductor layer (43), and a shallower opposite conductivity type region (73) formed in said high impurity region (72), thereby forming a p-n junction between said high impurity region (72) and said shallower opposite conductivity type region (73), characterized in that said high impurity region (72) is covered by a low impurity region (71) having the conductivity type same as that of and a lower impurity concentration than that of said high impurity region, said low impurity region (71) having a depth deeper than said high impurity region (72) but shallower than said semiconductor layer (43).
Claim 18
Dependent Claim
134 words
A semiconductor integrated circuit including a diode part comprising a high impurity region (72) formed in a semiconductor layer (43), said high impurity region having a first conductivity type which is opposite to a second conductivity type of said semiconductor layer (43), and a shallower opposite conductivity type region (73) formed in said high impurity region (72), thereby forming a p-n junction between said high impurity region (72) and said shallower opposite conductivity type region (73), characterized in that said high impurity region (72) is covered by a low impurity region (71) having the conductivity type same as that of and a lower impurity concentration than that of said high impurity region, said low impurity region (71) having a depth deeper than said high impurity region (72) but shallower than said semiconductor layer (43).
Claim 19
Dependent Claim
55 words
A semiconductor integrated circuit in accordance with claim 15, which further comprises at least one of an npn bipolar transistor and integrated injection logic in a semiconductor layer (43) which is of the same conductivity type, of substantially the same impurity concentration and of substantially the same depth as those of said semiconductor layer (43).
Claim 20
Dependent Claim
78 words
A semiconductor integrated circuit in accordance with claim 16, wherein said high impurity region (72) is formed with substantially the same depth and substantially the same impurity concentration with those of the base region (51) of said npn bipolar transistor (Tr) and said low impurity region (71) is formed with substantially the same depth and substantially the same impurity concentration with those of the base region (45) of an inverted npn transistor in said integral injection logic (IIL).
Claim 21
Dependent Claim
137 words
A semiconductor integrated circuit including a capacitor part comprising a high impurity region (66') formed in a semiconductor layer (43), said high impurity region having a first conductivity type which is opposite to a second conductivity type of said semiconductor layer (43), and a shallower opposite conductivity type region (67') formed in said high impurity region (66'), thereby forming a p-n junction for affording capacitance between said high impurity region (66') and said shallower opposite conductivity type region (67'), characterized in that said high impurity region (66') is covered by a low impurity region (65') having the conductivity type same as that of and a lower impurity concentration than that of said high impurity region, said low impurity region (65') having a depth deeper than said high impurity region (66') but shallower than said semiconductor layer (43).
Claim 22
Dependent Claim
137 words
A semiconductor integrated circuit including a capacitor part comprising a high impurity region (66') formed in a semiconductor layer (43), said high impurity region having a first conductivity type which is opposite to a second conductivity type of said semiconductor layer (43), and a shallower opposite conductivity type region (67') formed in said high impurity region (66'), thereby forming a p-n junction for affording capacitance between said high impurity region (66') and said shallower opposite conductivity type region (67'), characterized in that said high impurity region (66') is covered by a low impurity region (65') having the conductivity type same as that of and a lower impurity concentration than that of said high impurity region, said low impurity region (65') having a depth deeper than said high impurity region (66') but shallower than said semiconductor layer (43).
Claim 23
Dependent Claim
40 words
A semiconductor integrated circuit in accordance with claim 18, wherein said shallower opposite conductivity type region (67') has such a plan view pattern seen at substrate surface as to enclose plan view pattern of said high impurity concentration region (66').
Claim 24
Dependent Claim
55 words
A semiconductor integrated circuit in accordance with claim 18, which further comprises at least one of an npn bipolar transistor and integrated injection logic in a semiconductor layer (43) which is of the same conductivity type, of substantially the same impurity concentration and of substantially the same depth as those of said semiconductor layer (43).
Claim 25
Dependent Claim
78 words
A semiconductor integrated circuit in accordance with claim 20, wherein said high impurity region (66') is formed with substantially the same depth and substantially the same impurity concentration with those of the base region (51) of said npn bipolar transistor (Tr) and said low impurity region (65') is formed with substantially the same depth and substantially the same impurity concentration with those of the base region (45) of an inverted npn transistor in said integral injection logic (IIL).
Claim 26
Dependent Claim
86 words
A semiconductor integrated circuit in accordance with claim 20, wherein said low impurity region (65') is formed with substantially the same depth and substantially the same impurity concentration with those of the base region (45) of an inverted npn transistor in said integrated injection logic, and said shallower opposite conductivity type region (67') is formed with substantially the same depth and substantially the same impurity concentration with those of the collector regions (48, 49, 50) of the inverted npn transistors of said integrated injection logic (IIL).
Claim 27
Dependent Claim
122 words
A semiconductor integrated circuit including an isolated crossing connection part comprising a high impurity region (83) formed in a semiconductor layer (43), said high impurity region (83) having a first conductivity type which is opposite to a second conductivity type of said semiconductor layer (43), and a shallower opposite conductivity type region (84) formed as connection conductor in said high impurity region (83) , characterized in that said high impurity region (83) is covered by a'low impurity region (82) having the conductivity type same as that of and a lower impurity concentration than that of said high impurity region (83), said low impurity region (82) having a depth deeper than said high impurity region (83) but shallower than said semiconductor layer (43).
Claim 28
Dependent Claim
122 words
A semiconductor integrated circuit including an isolated crossing connection part comprising a high impurity region (83) formed in a semiconductor layer (43), said high impurity region (83) having a first conductivity type which is opposite to a second conductivity type of said semiconductor layer (43), and a shallower opposite conductivity type region (84) formed as connection conductor in said high impurity region (83) , characterized in that said high impurity region (83) is covered by a'low impurity region (82) having the conductivity type same as that of and a lower impurity concentration than that of said high impurity region (83), said low impurity region (82) having a depth deeper than said high impurity region (83) but shallower than said semiconductor layer (43).
Claim 29
Dependent Claim
55 words
A semiconductor integrated circuit in accordance with claim 23, which further comprises a conductor (87) on the surface of said shallower opposite conductivity type region (84) with an insulation film (56) inbetween, said conductor (87) and said shallower opposite conductivity type region (84) are disposed each other crossing and isolated by said insulation film (56).
Claim 30
Dependent Claim
56 words
A semiconductor integrated circuit in accordance with claim 23, which further comprises at least one of an npn bipolar transistor and integrated injection logic (IIL) in a semiconductor layer (43) which is of the same conductivity type, of substantially the same impurity concentration and of substantially the same depth as those of said semiconductor layer (43).
References Cited (Backward Citations)
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