Abstract A p-i-n amorphous silicon photovoltaic cell of improved conversion efficiency is obtained by incorporating, on at least either one of the p and n type sides of he cell, preferably on the side exposed to the incident ight, an amorphous semiconductor which satisfies the equirement that the optical band gap, Eg.opt, be not ess than about 1.85 eV, the electric conductivity be not ess than about 10- 8 Ωcm -1 and the p-i-n junction diffusion potential, Vd, be not less than about 1.1 volts and the requirement that the amorphous semiconductor be formed of a substrate represented by the general for- nula, a-Si 1-x C x or a-Si 1-y N y .
A p-i-n amorphous silicon type photovoltaic cell, characterized by incorporating on at least either one of the p and n type sides thereof exposed to the incident light an amorphous semiconductor having an optical band gap, Eg.opt, of'not less than about 1.85 eV, an electric conductivity of not less than about 10 -8 (Ωcm) -1 at 20°C and a p-i-n junction diffusion potential, Vd, of not less than about 1.1 volts.
Claim 2
Dependent Claim
71 words
A p-i-n amorphous silicon type photovoltaic cell, characterized by incorporating on at least either one of the p and n type sides thereof exposed to the incident light an amorphous semiconductor having an optical band gap, Eg.opt, of'not less than about 1.85 eV, an electric conductivity of not less than about 10 -8 (Ωcm) -1 at 20°C and a p-i-n junction diffusion potential, Vd, of not less than about 1.1 volts.
Claim 3
Dependent Claim
39 words
The p-i-n amorphous silicon type photovoltaic cell according to Claim 1, wherein the p or n type amorphous semiconductor is made of a substance represented by the general. formula a-Si 1-x C x or a-Si 1-y N y respectively.
Claim 4
Dependent Claim
34 words
The p-i-n amorphous silicon type photovoltaic cell according to Claim 2, wherein the amorphous semiconductor satisfies 0.05 < x < 0.8 or 0.05 < y < 0.8 with respect to the general formula involved.
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