pin photovoltaic cell having a hetero junction of amorphous siliconcompound and amorphous silicon

Abstract

Abstract A p-i-n amorphous silicon photovoltaic cell of improved conversion efficiency is obtained by incorporating, on at least either one of the p and n type sides of he cell, preferably on the side exposed to the incident ight, an amorphous semiconductor which satisfies the equirement that the optical band gap, Eg.opt, be not ess than about 1.85 eV, the electric conductivity be not ess than about 10- 8 Ωcm -1 and the p-i-n junction diffusion potential, Vd, be not less than about 1.1 volts and the requirement that the amorphous semiconductor be formed of a substrate represented by the general for- nula, a-Si 1-x C x or a-Si 1-y N y .

Inventors

• 👤 Yoshihiro Hamakawa
• 👤 Yoshihisa Tawada

Bibliographic Details