Patent EP0047663A2 successfully refreshed from Google Patents.
EP0047663A2
Expired / Lapsed
EP
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Microwave plasma etching
Assignee: Hitachi Ltd
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Filing: 1981-09-08
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Granted: —
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Expires: 2001-09-08
Abstract
Abstract A microwave plasma etching system is disclosed which comprises a vacuum chamber for providing a discharge space (5) and provided with an inlet (15) for introducing a discharge gas containing a fluorine-containing gas, magnetic field forming means (7) for forming a magnetic field in the discharge space (5) microwave electric field forming means (3) for forming a microwave electric field in the discharge space (5), and substrate holding means (11) for holding substrates (12) to be processed in the vacuum chamber. To provide freedom from side etching, or control of the degree of side etching, hydrogen is included in the discharge gas. Oxygen may also be included.
Inventors
- 👤 Shigeru Nishimatsu
- 👤 Keizo Suzuki
- 👤 Ken Ninomiya
- 👤 Ichiro Kanomata
- 👤 Sadayuki Okudaira
- 👤 Hiroji Saida
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 12:24
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32431; H01J37/3266; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3343; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267; H10P50/268; H10P50/28; H10P50/282; H10P50/283
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
98 words
A microwave plasma etching system comprising a vacuum chamber defining a discharge space (5) and provided with inlet means (15) for introducing a discharge gas including a fluorine-containing gas, magnetic field forming means (7) for forming a magnetic field in said discharge space (5), microwave electric field forming means (3) for forming a microwave electric field in the discharge space (5), and substrate holding means (11) for holding a substrate (12) to be processed in said vacuum chamber, characterised in that said means for introducing the discharge gas is arranged to include hydrogen gas in the discharge gas.
Claim 2
Dependent Claim
98 words
A microwave plasma etching system comprising a vacuum chamber defining a discharge space (5) and provided with inlet means (15) for introducing a discharge gas including a fluorine-containing gas, magnetic field forming means (7) for forming a magnetic field in said discharge space (5), microwave electric field forming means (3) for forming a microwave electric field in the discharge space (5), and substrate holding means (11) for holding a substrate (12) to be processed in said vacuum chamber, characterised in that said means for introducing the discharge gas is arranged to include hydrogen gas in the discharge gas.
Claim 3
Dependent Claim
29 words
A microwave plasma etching system as defined in claim 1 wherein said means for introducing the discharge gas is further arranged to include oxygen gas in the discharge gas.
Claim 4
Dependent Claim
22 words
A microwave plasma etching system as defined in claim 1 or claim 2 wherein said fluorine containing gas is SF 6 gas.
Claim 5
Independent Claim
43 words
A method of plasma etching a substrate wherein a fluoride is used as a discharge gas characterized in that hydrogen gas is also present in the discharge gas in an amount sufficient to reduce the concentration of fluorine radicals at the etching site.
Claim 6
Independent Claim
43 words
A method of plasma etching a substrate wherein a fluoride is used as a discharge gas characterized in that hydrogen gas is also present in the discharge gas in an amount sufficient to reduce the concentration of fluorine radicals at the etching site.
Claim 7
Dependent Claim
19 words
A method of plasma etching according to claim 4 wherein oxygen gas is also present in the discharge gas.
References Cited (Backward Citations)
No citation records indexed.
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