Patent EP0046629A2 successfully refreshed from Google Patents.
EP0046629A2
Expired / Lapsed
EP
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Semi-conductor memory device having an insulated gate field effect transistor as a fundamental element
Assignee: Mitsubishi Electric Corp
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Filing: 1981-06-18
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Granted: —
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Expires: 2001-06-18
Abstract
Abstract A semiconductor memory device having two layer polycrystal silicon and having an insulated gate field effect transistor as a fundamental element is prepared by using a first layer polycrystal silicon as an electrode of a capacitor and a bit string and using a second layer polycrystal silicon as a gate electrode of said transistor.
Inventors
- 👤 Kazuhiro Shimotori
- 👤 Hideyuki Mitsubishi Denki Kabushiki Kaisha Ozaki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 01:06
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H; H10; H10B; H10B12/00; H10B12/30; H10W; H10W20/00; H10W20/40; H10W20/495
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
57 words
1) In a semiconductor memory device having two layer polycrystal silicon and having an insulated gate field effect transistor as a fundamental element, an improvement characterized by using a first layer polycrystal silicon as an electrode of a capacitor and a bit string and using a second layer polycrystal silicon as a gate electrode of said transistor.
Claim 2
Dependent Claim
57 words
1) In a semiconductor memory device having two layer polycrystal silicon and having an insulated gate field effect transistor as a fundamental element, an improvement characterized by using a first layer polycrystal silicon as an electrode of a capacitor and a bit string and using a second layer polycrystal silicon as a gate electrode of said transistor.
Claim 3
Dependent Claim
35 words
2) The semiconductor memory device according to Claim 1 wherein said first layer polycrystal silicon forms said bit string by electrically connecting to an N type semiconductor region and said electrical connection is direct connection.
Claim 4
Dependent Claim
17 words
3) The semiconductor memory device according to Claim 1 which comprises a N region adduct junction capacitor.
Claim 5
Dependent Claim
22 words
4) The semiconductor memory device according to Claim 1 wherein said second layer polycrystal silicon partially covers said 'first layer polycrystal silicon.
References Cited (Backward Citations)
No citation records indexed.
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