Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
93 words
A semiconductor device comprising a compound semiconductor material which is anodically oxidizable to form a passivating native oxide on exposed surfaces, the device including a metallic contact comprising: (a) a contact metal layer formed on a portion of the semiconductor surface, said contact metal layer forming a substantially non-rectifying contact with said semiconductor surface and providing a diffusion barrier; and (b) an oxidizable metal layer formed on said contact metal layer, said oxidizable metal being selected from the group consisting of metals occupying a position between hydrogen and magnesium on the Electromotive Series.
Claim 2
Dependent Claim
93 words
A semiconductor device comprising a compound semiconductor material which is anodically oxidizable to form a passivating native oxide on exposed surfaces, the device including a metallic contact comprising: (a) a contact metal layer formed on a portion of the semiconductor surface, said contact metal layer forming a substantially non-rectifying contact with said semiconductor surface and providing a diffusion barrier; and (b) an oxidizable metal layer formed on said contact metal layer, said oxidizable metal being selected from the group consisting of metals occupying a position between hydrogen and magnesium on the Electromotive Series.
Claim 3
Dependent Claim
41 words
The device of claim 1 further comprising a low resistance metal layer between said contact metal layer and said oxidizable metal layer, said low resistance metal layer being physically stable and metallurgically compatible with said contact metal and said oxidizable metal.
Claim 4
Dependent Claim
24 words
The device of claim 2 in which the low resistance metal layer is of gold or lead and is 1000 to 20,000 A thick.
Claim 5
Independent Claim
26 words
The device of any preceding claim in which said semiconductor material is selected from the group consisting of (Hd,Cd)Te, (Pb,Sn)Te, GaAs, InAs, InSb, (In,Ga)Sb and In(As,Sb).
Claim 6
Independent Claim
26 words
The device of any preceding claim in which said contact metal layer is of titanium, chromium, nickel or palladium and is 300 to 1000 Å thick.
Claim 7
Independent Claim
31 words
The device of any preceding claim in which said oxidizable metal layer is of aluminum, titanium, nickel, chromium, indium, niobium, tantalum, tungsten or vanadium and is 500 to 1000 Å thick.
Claim 8
Dependent Claim
67 words
The device of claim 2 in which the semiconductor material is (Hd,Cd)Te, the contact metal layer is of titanium or palladium and is 600 to 800 A thick, the low resistance metal layer is of gold or lead and is 1000 to 20,000 Å thick, and the oxidizable metal layer is of titanium, nickel, chromium, niobium, tantalum, tungsten or vanadium and is 600 to 800 Å thick.
Claim 9
Dependent Claim
29 words
The device of claim 7 in which both the contact metal layer and the oxidizable metal layer are of titanium, and the low resistance metal layer is of gold.