Patent EP0045258A2 successfully refreshed from Google Patents.
EP0045258A2
Expired / Lapsed
EP
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Photovoltaic detector sensitive in the near infrared range
Assignee: Societe Anonyme de Telecommunications SAT
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Filing: 1981-07-24
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Granted: —
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Expires: 2001-07-24
Abstract
Abstract 1. Photovoltaic detector having its maximum sensitivy between 800 and 2 000 nm, of the type comprising a P type substrate made of Hg1-x Cdx Te , x being selected as a function of the desired spectral response and a N type zone being formed in the substrate, characterized in that x is within a range of 0,4 to 0,9, the concentration of the P carriers in the substrate is less than 10**15/cm**3, and an intrinsic zone I relatively which is formed between the zones N(6) and P(1).
Inventors
- 👤 Guy Pichard
- 👤 Michel Royer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 16:24
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F71/00; H10F71/125; H10F71/1253; H10P14/00; H10P14/60; H10P14/69; H10P32/17
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