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EP0042574A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

A method of reactive sputtering and apparatus for carrying out processes of reactive sputtering

Assignee: Fujitsu Ltd
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Filing: 1981-06-16
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Granted: —
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Expires: 2001-06-16
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Abstract

Abstract In a known method of reactive sputtering wherein inert gas and reactive gas are introduced into a reaction chamber (1) provided with a pair of oppositely arranged electrodes (3,6) on one of which is placed a semiconductor substrate (4) to be treated and a target material (7) on the other electrode. An RF power (11) is applied to the latter electrode (6) to generate plasma which activates the inert gas to eject silicon particles from the target material (7) for reaction with nitrogen radical for forming a film of silicon nitride on the substrate (4). The invention improves the quality of said film as well as its growth rate by activating reactive gas in advance before introducing the same into the reaction chamber (1). A microwave oscillator (18) is used for activating the reactive gas, and the electrode (6) on which the target material (7) is placed comprises a magnetron.

Inventors

  • 👤 Kanetake Takasaki

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-07 12:43
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0047

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 58 words
A method of reactive sputtering, characterized by the steps: to activate reactive gas in advance and to introduce the same into a reaction chamber, to form a desired film on the surface of a substrate material to be treated through the reaction of the particles ejected from a target material and said reactive gas in said reactive chamber.
Claim 2
Independent Claim 58 words
A method of reactive sputtering, characterized by the steps: to activate reactive gas in advance and to introduce the same into a reaction chamber, to form a desired film on the surface of a substrate material to be treated through the reaction of the particles ejected from a target material and said reactive gas in said reactive chamber.
Claim 3
Dependent Claim 19 words
A method of claim 1, characterized in.that said reactive gas is nitrogen gas and said target material is silicon.
Claim 4
Dependent Claim 54 words
A method of claim 1, characterized in that said that said reactive gas is selected from a group of oxygen (0 2 ), nitric monoxide (NO), nitrous oxide (N 2 0) or mixture of some of these, and said target material is selected from a group of aluminum (Al), titanium (Ti) and tantalum (Ta).
Claim 5
Independent Claim 86 words
An apparatus for carrying out processes of reactive sputtering which comprises: a reaction chamber (1) in which electrodes (3,6) are provided (oppositely), with a material (4) to be treated being placed on one electrode (3) and a target material (7) on the other electrode (6), a vacuum pump system (2), a high frequency power source (11), an inlet (13) for inert gas, and an inlet (14) for a reactive gas, characterized in that a plasmagenerator (15) is connected to the inlet (14) for the reactive gas.
Claim 6
Independent Claim 86 words
An apparatus for carrying out processes of reactive sputtering which comprises: a reaction chamber (1) in which electrodes (3,6) are provided (oppositely), with a material (4) to be treated being placed on one electrode (3) and a target material (7) on the other electrode (6), a vacuum pump system (2), a high frequency power source (11), an inlet (13) for inert gas, and an inlet (14) for a reactive gas, characterized in that a plasmagenerator (15) is connected to the inlet (14) for the reactive gas.
Claim 7
Dependent Claim 22 words
An apparatus of claim 4, characterized in that said electrode (6) on which said target material (7) is placed comprises a magnetron.
Claim 8
Dependent Claim 18 words
An apparatus of claim 4 which is characterized in that said plasmagenerator (15) comprises a microwave oscillator (18).

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