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EP0042218A1
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Semiconductor image sensor and a method of operating the same
Assignee: Semiconductor Research Foundation
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Filing: 1981-05-21
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Granted: —
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Expires: 2001-05-21
Abstract
Abstract The image sensor has a hook structure formed of n + region (4), i region (5), p region (6) and n + region (7). The impurity concentrations in the hook structure, their distribution profiles and the materials of the regions forming the hook structure and their thicknesses are so selected as to optimise carrier storage function to permit non-destructive readout of optical information. A refreshed operation is performed by applying a pulse voltage Os in such a manner that a bias voltage is applied to a substrate or surface electrode (3) only in a light integration period and, in a refresh period, the pulse voltage φs is made zero or negative.
Inventors
- 👤 Nishizawa Jun-Ichi
- 👤 Ohmi Tadahiro
- 👤 Tamamushi Takashige
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 17:51
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/196; H10F39/80; H10F39/807
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
190 words
A semiconductor image sensor provided with a plurality of cells, each comprising a radiant energy input information detecting hook structure composed of a conductive first region for receiving a radiant energy, a high resistivity second region, a third region of a first conductivity type and h ing an impurity concentration in the range of 1 0 15 to 10 18 cm- 3 , a low resistivity fourth region of a second conductivity type reverse from the first conductivity type, and voltage applying means for directing one of photo carriers generated in pairs by the radiant energy in the first and second regions to the third region through the second region, the first to fourth regions being sequentially formed on a semiconductor substrate from the main surface thereof towards the inside thereof; a readout transistor using the fourth region of the hook structure as one of its main electrodes; and refresh means for extinguishing excess majority carriers in the third region of the hook strucutre; the refresh means is voltage applying means for flowing out the excess majority carriers in the third region into the first region through the second region.
Claim 2
Dependent Claim
190 words
A semiconductor image sensor provided with a plurality of cells, each comprising a radiant energy input information detecting hook structure composed of a conductive first region for receiving a radiant energy, a high resistivity second region, a third region of a first conductivity type and h ing an impurity concentration in the range of 1 0 15 to 10 18 cm- 3 , a low resistivity fourth region of a second conductivity type reverse from the first conductivity type, and voltage applying means for directing one of photo carriers generated in pairs by the radiant energy in the first and second regions to the third region through the second region, the first to fourth regions being sequentially formed on a semiconductor substrate from the main surface thereof towards the inside thereof; a readout transistor using the fourth region of the hook structure as one of its main electrodes; and refresh means for extinguishing excess majority carriers in the third region of the hook strucutre; the refresh means is voltage applying means for flowing out the excess majority carriers in the third region into the first region through the second region.
Claim 3
Dependent Claim
24 words
A semiconductor image sensor according to claim 1 wherein the third region has a thickness in the range of about 0.1 to 3 µm.
Claim 4
Dependent Claim
29 words
3 . A semiconductor image sensor according to claim 1 or 2 wherein the fourth region has an impurity concentration more than 100 times higher than the third region.
Claim 5
Dependent Claim
39 words
A semiconductor image sensor according to claim 1 or 2 wherein the third region has an impurity concentration distribution which is graded so that the impurity concentration decreases as the distance from the interface with the fourth region increases.
Claim 6
Dependent Claim
42 words
A semiconductor image sensor a ccord i r gto claim 1 or 2 wherein the fourth region has an impurity concentration distribution which is graded so that the impurity concentration increases as the distance from the interface with the third region increases.
Claim 7
Dependent Claim
32 words
A semiconductor image sensor according to claim 1 or 2 whereinthe fourth region is formed of a semiconductor material having a larger energy gap than a semiconductor material for the third region.
Claim 8
Dependent Claim
28 words
A semiconductor image sensor according to claim 1 or 2 wherein the first region is a transparent electrode which permits the passage therethrough of the input radiant energy
Claim 9
Dependent Claim
33 words
A semiconductor image sensor according to claim 7 wherein the transparent electrode is formed of a semiconductor materal having a larger energy gap than that of a semiconductor material for the second region.
Claim 10
Dependent Claim
30 words
A semiconductor image sensor according to claim 1 or 2 wherein the first region is a metal electrode disposed so that it does not substantially intercept the input radiant energy.
Claim 11
Dependent Claim
39 words
A semiconductor image sensor according to claim 1 or 2 wherein the first region is composed of electrode means and a low resistivity semiconductor region of the second conductivity type formed between the electrode means and the second region.
Claim 12
Dependent Claim
20 words
A semiconductor image sensor according to claim 10 wherein the electrode means is formed corresponding to each readout address line.
Claim 13
Dependent Claim
21 words
A semiconductor image sensor according to claim 11 wherein the electrode means is disposed in parallel with the readout address line.
Claim 14
Dependent Claim
34 words
A semiconductor image sensor according to claim 1 or 2 wherein the readout transistor and the hook structure are respectively formed on the sides of first and second main surfaces of the semiconductor substrate.
Claim 15
Dependent Claim
36 words
A semiconductor image sensor according to claim 1 or 2 wherein a control electrode and the other main electrode of the readout transistor are respectively connected to the readout address line and a signal output line.
Claim 16
Dependent Claim
35 words
A semiconductor image sensor according to claim 1 or 2 wherein the fourth region has a ground electrostatic capacitance larger than the junction capacitance of a pn junction formed between the fourth and third regions.
Claim 17
Independent Claim
215 words
A method of operating a semiconductor image sensor which is provided with a plurality of cells, each comprising a radiant energy input information detecting hook structure composed of a conductive first region for receiving a radiant energy, a high resistivity second region. a third region of a first conductivity type and having an impurity concentration in the range of 10 15 to 10 18 cm-3 a low resistivity fourth region of a second conductivity type reverse from the first conductivity type, and voltage applying means for directing one of photo carriers generated in pairs by the radiant energy in the first and second regions to the third region throuth the second region, the first to fourth regions being sequentially formed on a semiconductor substrate from the main surface thereof towards the inside thereof; a readout transistor using the fourth region of the hook structure as one of its main electrodes; and refresh means for flowing out excess majority carriers in the third region of the hook structure into the first region through the second region; wherein the readout transitor is conducted at least once or more in the time interval between the activation of the refresh means and the next activation thereof, whereby the time integrated value of the input radiant energy is read out.
Claim 18
Independent Claim
215 words
A method of operating a semiconductor image sensor which is provided with a plurality of cells, each comprising a radiant energy input information detecting hook structure composed of a conductive first region for receiving a radiant energy, a high resistivity second region. a third region of a first conductivity type and having an impurity concentration in the range of 10 15 to 10 18 cm-3 a low resistivity fourth region of a second conductivity type reverse from the first conductivity type, and voltage applying means for directing one of photo carriers generated in pairs by the radiant energy in the first and second regions to the third region throuth the second region, the first to fourth regions being sequentially formed on a semiconductor substrate from the main surface thereof towards the inside thereof; a readout transistor using the fourth region of the hook structure as one of its main electrodes; and refresh means for flowing out excess majority carriers in the third region of the hook structure into the first region through the second region; wherein the readout transitor is conducted at least once or more in the time interval between the activation of the refresh means and the next activation thereof, whereby the time integrated value of the input radiant energy is read out.
References Cited (Backward Citations)
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