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EP0040076A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Photoelectric converter

Assignee: Hitachi Ltd
•
Filing: 1981-05-08
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Granted: —
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Expires: 2001-05-08
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Abstract

Abstract A photoelectric converter has a photoelectric conversion means formed on a substrate (20). The photoelectric conversion means includes at least, a first electrode (31), a hydrogenated amorphous silicon layer (32) formed on said first electrode and a second electrode consisting of a transparent conductive layer (38) formed on the hydrogenated amorphous silicon layer. The improvement consists in that the transparent conductive layer (38) is a layer made of In 2 O 3 or a solid solution of In 2 O 3 and Sn0 2 and has a thickness in the range 300A to 2000A. This transparent conductive layer is free from the problem of peeling, and has an electric conductivity sufficiently high to make it useful in practice.

Inventors

  • 👤 Akira Sasano
  • 👤 Yasuharu Shimomoto
  • 👤 Yasuo Tanaka
  • 👤 Toshihiro Tanaka
  • 👤 Toshihisa Tsukada

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-26 11:30
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/011; H10F39/024; H10F99/00; H10F39/016; H10F39/10; H10F39/12; H10F39/191; H10F39/80; H10F39/802; H10F39/805; H10F39/8053

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 93 words
A photoelectric converter comprising photoelectric conversion means formed on a substrate (20), said photoelectric conversion means including at least a first electrode (31),a hydrogenated amorphous silicon layer (32) as herein defined formed on said first electrode (31) and a second electrode (38) in the form of a transparent conductive layer formed on said silicon layer (32) characterized in that said transparent conductive layer.(38) has a thickness in the range 300A to 2000A and is composed of In 2 O 3 or a solid solution of In 2 O 3 and Sn0 2 .
Claim 2
Dependent Claim 93 words
A photoelectric converter comprising photoelectric conversion means formed on a substrate (20), said photoelectric conversion means including at least a first electrode (31),a hydrogenated amorphous silicon layer (32) as herein defined formed on said first electrode (31) and a second electrode (38) in the form of a transparent conductive layer formed on said silicon layer (32) characterized in that said transparent conductive layer.(38) has a thickness in the range 300A to 2000A and is composed of In 2 O 3 or a solid solution of In 2 O 3 and Sn0 2 .
Claim 3
Dependent Claim 34 words
A photoelectric converter according to claim 1, wherein said substrate includes scanning means for successively scanning a plurality of said photoelectric conversion means, said first electrode constituting electrical connecting means of said scanning means.
Claim 4
Dependent Claim 33 words
A photoelectric converter according to claim 2, wherein Said substrate (20) is a semiconductor substrate, and a plurality of said first electrodes of said scanning means are arranged in a two dimensional array.
Claim 5
Dependent Claim 22 words
A photoelectric converter according to claim 2 or claim 3 having a color filter (52) formed on said transparent conductive layer (38).

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