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Patent EP0038221A2 successfully refreshed from Google Patents.
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EP0038221A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Electrophotographic member

Assignee: Hitachi Ltd
•
Filing: 1981-04-15
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Granted: —
•
Expires: 2001-04-15
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Abstract

Abstract An electrophotographic member has a support (1) and an amorphous silicon photoconductive layer (2). To achieve satisfactory resolution and good dark-decay characteristics, a region (22) of said layer (1) which is at least 10 nm thick and extends inwardly of the amorphous silicon layer from a surface of the layer (2) is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of a least 10 10 Q.cm. Additionally to increase the sensitivity of the electrophotographic member to light of longer wavelengths, a region (23) which has an optical forbidden band gap narrower than that of the said surface region (22) is disposed within the amorphous silicon layer and has a thickness of at least 10 nm.

Inventors

  • 👤 Eiichi Maruyama
  • 👤 Sachio Ishioka
  • 👤 Yoshinori Imamura
  • 👤 Hirokazu Matsubara
  • 👤 Yasuharu Shimomoto
  • 👤 Shinkichi Horigome
  • 👤 Yoshio Taniguchi

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 14:20
CPC Classifications
G; G03; G03G; G03G5/00; G03G5/02; G03G5/04; G03G5/08; G03G5/082; G03G5/08214; G03G5/08235; G03G5/08221

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 75 words
An electrophotographic member having a support (1) and an amorphous silicon layer (2) (as herein defined) containing hydrogen, characterized in that: a region (22) of said layer (2) which is at least 10 nm thick and extends inwardly from a surface of said layer (2) is made of amorphous silicon (as herein defined) which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10 10 Ω cm.
Claim 2
Dependent Claim 75 words
An electrophotographic member having a support (1) and an amorphous silicon layer (2) (as herein defined) containing hydrogen, characterized in that: a region (22) of said layer (2) which is at least 10 nm thick and extends inwardly from a surface of said layer (2) is made of amorphous silicon (as herein defined) which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10 10 Ω cm.
Claim 3
Dependent Claim 63 words
An electrophotographic member according to claim 1, wherein, at least 10 nm from said surface of said layer (2) there is a second region (23) of amorphous silicon (as herein defined) whose optical forbidden band gap is not greater than that ofsaid region (22) at the surface of the layer (2), the second region (23) having a thickness of at least 10 nm.
Claim 4
Dependent Claim 77 words
An electrophotographic member according to claim 2, wherein an interface region (24) of said layer (2) at a side thereof opposite to said surface region (22) is made of amorphous silicon (as herein defined) which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10 10 Ω.cm and wherein said optical forbidden band gap of said second region (23) is not greater than that of said interface region (24).
Claim 5
Dependent Claim 28 words
An electrophotographic member according to any one of claims 1 to 3 wherein said amorphous silicon layer (2) is formed by reactive sputtering in an atmosphere containing hydrogen.
Claim 6
Dependent Claim 26 words
An electrophotographic member according to any one of claims 1 to 4 wherein said amorphous silicon layer (2) contains at least one of germanium and carbon.

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