Patent EP0031918A2 successfully refreshed from Google Patents.
EP0031918A2
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EP
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Method and apparatus for manufacturing a device by evaporation
Assignee: Japan Broadcasting Corp
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Filing: 1980-12-11
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Granted: —
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Expires: 2000-12-11
Abstract
Abstract in a vacuum container an active gas consisting of either one of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1 × 10 -2 Torr or less is produced. In an atmosphere of the active gas, a film, which consists of a compound presenting semiconductor characteristics (CdS, CdSe, ZnSe, ZnS, ZnTe, CdTe) or a solid solution thereof and presents a desired polarity property such as p, n, p + or n + , is vapor-deposited on a substrate at a desired position with a desired thickness, so as to fabricate an evaporation device which is preferable, for example, as a photoconductive target for a television camera tube.
Inventors
- 👤 Kazuhisa Taketoshi
- 👤 Chihaya Ogusu
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-25 13:31
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; H; H10; H10F; H10F71/00; H10P; H10P14/00; H10P14/20; H10P14/22; H10P14/29; H10P14/2901; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3224; H10P14/3228; H10P14/3231; H10P14/3232
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
77 words
1 . A method for fabricating an evaporation device, comprising the steps of forming an atmosphere containing an active gas selected from a group consisting of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1 x 10 -3 Torr or less, in a vacuum container, and depositing a film consisting of a compound presenting a semiconductor characteristics or a solid solution thereof on a substrate in said atmosphere to form said evaporation device.
Claim 2
Dependent Claim
77 words
1 . A method for fabricating an evaporation device, comprising the steps of forming an atmosphere containing an active gas selected from a group consisting of active hydrogen, active oxygen and active nitrogen with a partial pressure of 1 x 10 -3 Torr or less, in a vacuum container, and depositing a film consisting of a compound presenting a semiconductor characteristics or a solid solution thereof on a substrate in said atmosphere to form said evaporation device.
Claim 3
Dependent Claim
139 words
A method for fabricating an evaporation device as claimed in claim 1, wherein said evaporation device is fabricated by the steps of introducing a gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas into said vacuum container with a pressure of 1 Torr or less, conducting a current in a range from 0.01 mA to 1 mA in said vacuum container by a high speed electron beam accelerated by an accelerating voltage in a range from 500 V to 3,000 V, so that the introduced gas is converted to said active gas, adjusting the pressure of said introduced gas containing said active gas at 1 x 10 -3 Torr or less, and depositing said film consisting of said compound presenting the semiconductor characteristics or said solid solution thereof on said substrate in said atmosphere.
Claim 4
Dependent Claim
37 words
A method for fabricating an evaporation device as claimed in claim 1, wherein said compound presenting the semiconductor characteristics or said solid solution thereof has a hetero junction between groups IIb and VIb in the periodic table.
Claim 5
Dependent Claim
45 words
A method for fabricating an evaporation device as claimed in claim 3, wherein said hetero junction between groups IIb and VIb is formed by a semiconductor compound selected from a group consisting of CdS, CdSe, ZnSe, ZnS, ZnTe and CdTe or a solid solution thereof.
Claim 6
Dependent Claim
60 words
A method for fabricating an evaporation device as claimed in claim 1, wherein said deposited film is formed by CdTe or ZnTe or a solid solution thereof and said active gas is active hydrogen, so as to form a film presenting p-type semiconductor characteristics in which a Fermi level exists in the vicinity of a center of a forbidden band.
Claim 7
Dependent Claim
58 words
A method for fabricating an evaporation device as claimed in claim 1, wherein said deposited film is formed by CdTe or ZnTe or a solid solution thereof and said active gas is active oxygen, so as to form a film presenting p type semiconductor characteristics in which a Fermi level exists in the vicinity of a full band.
Claim 8
Dependent Claim
71 words
A method for fabricating an evaporation device as claimed in claim 1, wherein said deposited film is formed by a semiconductor compound selected from a group consisting of CdS, CdSe, ZnS and ZnSe or a solid solution thereof and said active gas is active oxygen, so as to form a film presenting n-type semiconductor characteristics in which a Fermi level exists in the vicinity of a center of a forbidden band.
Claim 9
Dependent Claim
69 words
A method for fabricating an evaporation device as claimed in claim 1, wherein said deposited film is formed by a semiconductor compound selected from a group consisting of CdS, CdSe, ZnS and ZnSe or a solid solution thereof and said active gas is active hydrogen, so as to form a film presenting n type semiconductor characteristics in which a Fermi level exists in the vicinity of a conduction band.
Claim 10
Dependent Claim
40 words
9 . A method for fabricating an evaporation device as claimed in claim 1, wherein said film presenting semiconductor characteristics is deposited on said substrate in an order of at least from "p" to "n" or from "n" to "p".
Claim 11
Dependent Claim
44 words
A method for fabricating an evaporation device as claimed in claim 1, wherein said film presenting semiconductor characteristics is deposited on said substrate in an order of at least from "p" to "p" via "n" or from " n " to "n" via "p".
Claim 12
Independent Claim
306 words
An apparatus for fabricating an evaporation device, wherein a film consisting of a compound presenting a semiconductor characteristics or a solid solution thereof is deposited on a substrate in an atmosphere of an active gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas with a partial pressure of 1 x 10 -3 Torr or less to form said evaporation device, said apparatus comprising; a vacuum container having a gas introduction path for introducing a gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas to said vacuum container and a gas exhaust path connected to a gas exhausting equipment for controlling a gas pressure and a vacuum condition in said vacuum container, a discharging means disposed in said vacuum container and having a cathode with a heating power source and an anode to which a voltage is applied with respect to said cathode for producing said active gas by activating said gas by a discharge between said cathode and said anode, an evaporation source disposed in said vacuum container for.accommodating evaporation material and having an evaporation heater for heating said evaporation material, a hot wall disposed in said vacuum container and having a hollow cylindrical body having a lower end opening for receiving a vapor evaporated from said evaporation source, an upper end opening being opposite to said lower end opening in a direction apart from said evaporation source, and an inner surface at least on which a resistive film is deposited so that the resistive film is heated by an electric power supplied across both ends of said resistive film, and a substrate mounting member for mounting said substrate on said upper end opening of said hot wall on which said vapor evaporated from said evaporation source is deposited so as to form said evaporation device.
Claim 13
Independent Claim
306 words
An apparatus for fabricating an evaporation device, wherein a film consisting of a compound presenting a semiconductor characteristics or a solid solution thereof is deposited on a substrate in an atmosphere of an active gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas with a partial pressure of 1 x 10 -3 Torr or less to form said evaporation device, said apparatus comprising; a vacuum container having a gas introduction path for introducing a gas selected from a group consisting of hydrogen gas, oxygen gas and nitrogen gas to said vacuum container and a gas exhaust path connected to a gas exhausting equipment for controlling a gas pressure and a vacuum condition in said vacuum container, a discharging means disposed in said vacuum container and having a cathode with a heating power source and an anode to which a voltage is applied with respect to said cathode for producing said active gas by activating said gas by a discharge between said cathode and said anode, an evaporation source disposed in said vacuum container for.accommodating evaporation material and having an evaporation heater for heating said evaporation material, a hot wall disposed in said vacuum container and having a hollow cylindrical body having a lower end opening for receiving a vapor evaporated from said evaporation source, an upper end opening being opposite to said lower end opening in a direction apart from said evaporation source, and an inner surface at least on which a resistive film is deposited so that the resistive film is heated by an electric power supplied across both ends of said resistive film, and a substrate mounting member for mounting said substrate on said upper end opening of said hot wall on which said vapor evaporated from said evaporation source is deposited so as to form said evaporation device.
Claim 14
Dependent Claim
43 words
An apparatus for fabricating an evaporation device as claimed in claim 11, wherein said anode and said cathode are arranged in a manner that an electron beam emitted by said discharging means is prevented from contacting said vapor evaporated from said evaporation source.
Claim 15
Dependent Claim
46 words
An apparatus for fabricating an evaporation device as claimed in claim 11, wherein said discharging means has a shielding plate for shielding an electron beam emitted by said discharging means so as to prevent said electron beam from contacting said vapor evaporated from said evaporation source.
Claim 16
Dependent Claim
135 words
An apparatus for fabricating an evaporation device as claimed in claim 11, wherein said hot wall has a first cylinder made of glass or ceramic and second cylinders connected to both edges of said first cylinder, respectively and each having a diameter which is smaller than a diameter of said first cylinder, a base holder being provided on one end of said second cylinder so as to hold an evaporation substrate, a resistive film being deposited on the outer surfaces of said first and second cylinders, and lead wires being wound respectively around said second cylinders, so that a current flows through said lead wires to heat said resistive film, whereby a temperature gradient being produced inside said first and second cylinders in accordance with the difference of diameters between said first and second cylinders.
Claim 17
Dependent Claim
44 words
An apparatus for fabricating an evaporation device as claimed in claim 11, wherein a resistive film is deposited on said inner surfaces of said first and second cylinders so as to prevent an electrification of said inner surfaces of said first and second cylinders.
Claim 18
Dependent Claim
117 words
An apparatus for fabricating an evaporation device as claimed in claim 11, wherein an oil diffusion pump is provided in said gas exhaust path, and in a downstream of said oil diffusion pump,there is provided an exhaust equipment having an exhaust box in which an oil rotary pump is accommodated, and small holes are provided in a lower part of said exhaust box, to an upper end of which is connected an exhausting duct, another end of which is immersed in a caustic soda solution filled in a purifying bottle, which is sucked by a ventilator through a second duct, so that toxic gases exhausted from said oil rotary pump are absorbed by said caustic soda solution.
Claim 19
Dependent Claim
101 words
An apparatus for fabricating an evaporation device as claimed in claim 11, wherein, said anode is formed of aluminium, a distance between said anode and said cathode of said discharging means is determined in a range from 10 cm to 30 cm, a d.c. voltage in a range from 500 V to 3,000 V is applied to said anode and a discharge current in a range from 0.01 mA to 1 mA is conducted for a time duration in a range from 5 minutes to 30 minutes under a partial pressure of the introduced gas of 1 Torr . or less.
Claim 20
Dependent Claim
142 words
An apparatus for fabricating an evaporation device as claimed in claim 14, wherein an inner diameter of each of said second cylinders is longer by an amount in a range from 10 % to 80 % than an inner diameter of said first cylinder, said resistive film consists of a graphite film having a thickness in a range from 0.05 mm to 0.5 mm and a resistivity in a range from 100 Ω to 1 kΩ, and said evaporation substrate consists of a glass substrate which is heated at a temperature in a range from 200 °C to 600 °C by supplying an electric power to said lead wires, so that a temperature at a side wall of said first cylinder becomes higher by a temperature in a range from 10 °C to 20 °C than a temperature at said glass substrate.
Claim 21
Dependent Claim
67 words
An apparatus for fabricating an evaporation device as claimed in claim 16, wherein a valve member is provided in said gas exhaust path between said vacuum container and said oil diffusion pump and is controlled in such a way that an exhausting speed in said gas exhaust path is lowered during the evaporation deposition to prevent said active gas from being exhausted from said oil diffusion pump.
Claim 22
Dependent Claim
50 words
An apparatus for fabricating an evaporation device as claimed in claim 19, wherein a degree of vacuum in said gas exhaust path between said oil diffusion pump and said oil rotary pump is set at a pressure in a range from 0.01 Torr to 0.05 Torr during the evaporation deposition.
References Cited (Backward Citations)
No citation records indexed.
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