Patent EP0031663A2 successfully refreshed from Google Patents.
EP0031663A2
Expired / Lapsed
EP
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Photoelectric device
Assignee: Hitachi Ltd
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Filing: 1980-12-12
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Granted: —
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Expires: 2000-12-12
Abstract
Abstract Disclosed is a photoelectric device used in the storage mode, particularly a photosensitive panel which can be employed as the photoconductive target in an image tube. It comprises a signal electrode (2) on a transparent substrate (1). An amorphous photoconductor layer (3) whose principal constituent is silicon and which contains hydrogen is disposed in adjacency to the signal electrode. To suppress dark current, a thin layer (8) is interposed between the signal electrode (2) and the amorphous photoconductor layer (3), the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from oxides of εi, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La. Be, Sc and Co, nitrides of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of Na, Mg, Li, Ba, Ca and K.
Inventors
- 👤 Yoshinori Imamura
- 👤 Yasuo Tanaka
- 👤 Saburo Ataka
- 👤 Tadaaki Hirai
- 👤 Yukio Takasaki
- 👤 Elichi Maruyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 09:03
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/10; H10F30/15; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/456; H01J9/00; H01J9/20; H01J9/233
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
131 words
A photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen, the amorphous photoconductor layer being disposed adjacent to the signal electrode; characterised in that a thin layer is interposed between said signal electrode and said amorphous photoconductor layer, said thin layer being made of an inorganic material whose principal constituent is at least one of the following compounds: an oxide of at least one of the elements Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co; a nitride of at least one of the elements Ga, Si, Mg, Ta, Hf, Zr, Nb and B; or a halide of at least one of the elements Na, Mg, Li, Ba, Ca and K.
Claim 2
Dependent Claim
131 words
A photoelectric device having at least a signal electrode, and an amorphous photoconductor layer whose principal constituent is silicon and which contains hydrogen, the amorphous photoconductor layer being disposed adjacent to the signal electrode; characterised in that a thin layer is interposed between said signal electrode and said amorphous photoconductor layer, said thin layer being made of an inorganic material whose principal constituent is at least one of the following compounds: an oxide of at least one of the elements Si, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La, Be, Sc and Co; a nitride of at least one of the elements Ga, Si, Mg, Ta, Hf, Zr, Nb and B; or a halide of at least one of the elements Na, Mg, Li, Ba, Ca and K.
Claim 3
Dependent Claim
107 words
A photoelectric device according to claim 1, wherein said inorganic material includes as its principal constituent at least one of the following compounds: SiO 2 , TiO 2 , Al 2 O 3 , MgO, BaO, Ta 2 O 5 , Bi 2 0 3 , V 2 0 5 , NiO, ThO 2 , Fe 2 O 3 , La 2 O 3 , Be O, S c 2 0 31 Co203, GaN, Si 3 N 4 , Si 2 N 3 , MgN 2 , TaN, HfN, ZrN, NbN, BN, MgF 2 , LiF, NaF, BaF 2 , CaF 2 , KF, and eutectics thereof.
Claim 4
Dependent Claim
67 words
A photoelectric device according to claim 1, wherein said inorganic material of said thin layer includes as its principal constituent at least one of the following compounds: an oxide of at least one of the elements Si, Ba, Ta, Ti and Al, a nitride of at least one of the elements Si and Ta, or a halide of at least one of the elements Li and Mg.
Claim 5
Dependent Claim
50 words
A photoelectric device according to claim 1, wherein said inorganic material of said thin layer includes at least one of the compounds Si0 2 , Al 2 O 3 , BaO, Ta 2 O 5 , TiO 2 , Si 3 N 4 , TaN, LiF and Mg F2 .
Claim 6
Dependent Claim
30 words
A photoelectric device according to any one of claims 1 to 4, wherein said thin layer made of said inorganic material has a thickness of 50 Å to 5,000 Å.
Claim 7
Dependent Claim
41 words
A photoelectric device according to any one of claims 1 to 5, further comprising a light-transmitting substrate, on which said signal electrode is disposed, the surface of said substrate which is opposite to said signal electrode constituting a light receiving surface.
Claim 8
Dependent Claim
32 words
A photoelectric device according to any one of claims 1 to 6, further comprising a beam landing layer on the surface of the photoconductor layer opposite said thin layer of inorganic material.
References Cited (Backward Citations)
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