Field effect transistor and fabricating process

Abstract

Abstract In order to increase the drain-source voltage applicable to the transistor, and consequently the power levels which can be achieved, the invention provides for the formation of a path in the interface (15) between the semiconductor layer (14) and the substrate (13), in such a manner that the thickness of the latter is greater under the drain electrode D than under the source electrode S; the gate electrode G is placed at the limit between the two parts of differing thicknesses of this layer. In a modified embodiment, the gate electrode forms a Schottky contact with the layer. Application: microwave amplifiers, especially in telecommunications.

Inventors

• 👤 Alain Bert

Bibliographic Details