Patent EP0029351A2 successfully refreshed from Google Patents.
EP0029351A2
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Solid-state imaging device
Assignee: Hitachi Ltd
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Filing: 1980-11-13
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Granted: —
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Expires: 2000-11-13
Abstract
Abstract A solid-state imaging device wherein a MOS sensor with a matrix of photodiodes (1) and vertical switching transistors (2) is employed for a photosensor part, a charge transfer device (CTD) shift register (42A, 42B) is employed for a read-out circuit, first and second transfer gates (44A, 44B, 45A, 45B) are connected between vertical signal output lines (4) and the CTD, and a reset gate (46A, 46B) is connected between a junction of the first and second transfer gates and a reset voltage line (BLDA, BLDB). A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. Bias charges are introduced into the CTD at an input (41A, 41 B). At the signal transfer, the bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.
Inventors
- 👤 Masakazu Aoki
- 👤 Iwao Takemoto
- 👤 Haruhisa Ando
- 👤 Ryuichi Izawa
- 👤 Shinya Ohba
- 👤 Shoji Hanamura
- 👤 Toshifumi Ozaki
- 👤 Masaharu Kubo
- 👤 Masaaki Nakai
- 👤 Kenji Takahashi
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 15:24
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H04; H04N; H04N25/00; H04N25/60; H04N25/67; H04N25/671; H04N25/672; H04N25/70; H04N25/76
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
124 words
A solid-state imaging device wherein a photosensor part is constructed of a MOS-type sensor (49) in which picture elements each consisting of a photodiode (1) and a switching insulated-gate field effect transistor (2) are arrayed in the form of a matrix, signal outputs of the respective picture elements of said MOS-sensor are transferred to a CTD (Charge Transfer Device) (42A,42B) through signal output lines (4), and the signal outputs are read out by said CTD; characterised by means (41A,41B) for supplying bias charges to said CTD, and signal-transfer means (44A,44B) for causing the bias charges to get into said signal output lines (4) so as to mix them with signal charges and for causing the mixed signal charges to get back into said CTD.
Claim 2
Dependent Claim
124 words
A solid-state imaging device wherein a photosensor part is constructed of a MOS-type sensor (49) in which picture elements each consisting of a photodiode (1) and a switching insulated-gate field effect transistor (2) are arrayed in the form of a matrix, signal outputs of the respective picture elements of said MOS-sensor are transferred to a CTD (Charge Transfer Device) (42A,42B) through signal output lines (4), and the signal outputs are read out by said CTD; characterised by means (41A,41B) for supplying bias charges to said CTD, and signal-transfer means (44A,44B) for causing the bias charges to get into said signal output lines (4) so as to mix them with signal charges and for causing the mixed signal charges to get back into said CTD.
Claim 3
Dependent Claim
30 words
A solid-state imaging device according to claim 1, wherein said signal-transfer means includes a first transfer gate element (44A,44B) which is connected between the signal output line and said CTD.
Claim 4
Dependent Claim
37 words
A solid-state imaging. device according to claim 2, further comprising reset means (45A,45B,46A,46B) for setting the potential of said signal output line to a predetermined reference voltage before the bias charges get into said signal output line.
Claim 5
Dependent Claim
61 words
A solid-state imaging device according to claim 3, wherein said reset means includes a second transfer gate element (45A,45B) which is connected between said first transfer gate element (44A,44B) and said signal output line (4), and a reset gate element (46A,46B) which is connected between a junction of said first and second transfer gate elements and a reset voltage line (BLDA,BLDB).
Claim 6
Dependent Claim
69 words
A solid-state imaging device according to claim 4, wherein said reset means includes means for controlling the potential of said reset voltage line (BLDA) so that, when said second transfer gate element (45A,45B) is in a conductive state, the charges may get into said signal output line (4) from said reset voltage line, and subsequently the charges may get.back into said reset voltage line from said signal output line.
Claim 7
Dependent Claim
85 words
A solid-state imaging device according to claim 2, wherein said signal-transfer means includes means HlA) for controlling the potential of a transfer electrode and/or storage electrode (57) of said CTD so that, when said first transfer gate element is'in a conductive state, the bias charges (154) stored underneath said transfer electrode and/or storage electrode may get into said signal output line, and subsequently the mixed charges (156) may get back into the part under said transfer electrode and/or storage electrode from said signal output line.
Claim 8
Dependent Claim
33 words
A solid-state imaging device according to claim 2, 4, 5 or 6, wherein the transfer gate element or elements (44A,44B,45A,45B) and the reset gate element (46A,46B) are made of insulated-gate field effect transistors.
Claim 9
Dependent Claim
69 words
A solid-state imaging device according to claim 1, wherein at least two CTDs (42A,42B) are coupled to each signal output line to provide first and second read-out channels, and means is provided for transferring the signal outputs to the first channel in a first half of a horizontal blanking period and for transferring the signal outputs to the second channel in a latter half of the horizontal blanking period.
Claim 10
Dependent Claim
44 words
A solid-state imaging device according to claim 8, wherein the signal outputs to be transferred to said first channel are those of an n-th row, while the signal outputs to be transferred to said second channel are those of an (n + l)-th row.
Claim 11
Dependent Claim
60 words
A solid-state imaging device according to claim 9, further comprising means for reading out the signal outputs of the n-th and (n + l)-th rows in an odd field and reading out the signal outputs of (n + l)-th and (n + 2)-th rows in an even field, thereby to perform an interlacing operation in a simultaneously-selected two rows method.
References Cited (Backward Citations)
No citation records indexed.
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