Patent EP0028678A2 successfully refreshed from Google Patents.
EP0028678A2
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EP
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Impurity diffusion process for producing a semiconductor device
Assignee: Hitachi Ltd
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Filing: 1980-08-05
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Granted: —
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Expires: 2000-08-05
Abstract
Abstract A region (17) containing a high concentration of impurity and a desired region (18) adjacent thereto arefused by irradiation with a laser beam (10), to diffuse the impurity in the lateral direction into the desired region (18) and to render the desired region (18) a low resistance. Since this method can execute only the lateral diffusion of the impurity without affecting other portions, it is very useful for forming a high breakdown voltage MIS-FET, a resistor etc.
Inventors
- 👤 Isao Yoshida
- 👤 Yasuo Wada
- 👤 Masao Tamura
- 👤 Masanobu Miyao
- 👤 Makoto Ohkura
- 👤 Nobuyoshi Natsuaki
- 👤 Takashi Tokuyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 12:45
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P32/00; H10P32/30; H10P32/302; Y; Y10; Y10S; Y10S148/00; Y10S148/091
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
57 words
A method of producing a semiconductor device, characterized by irradiating with a laser beam (10) a region (8; 17; 22) which contains an impurity at a high concentration and a desired region (9; 18;21) which adjoins the first-mentioned region (8; 17; 22), thereby to diffuse said impurity in a plane direction into said desired region (9;18; 21).
Claim 2
Independent Claim
57 words
A method of producing a semiconductor device, characterized by irradiating with a laser beam (10) a region (8; 17; 22) which contains an impurity at a high concentration and a desired region (9; 18;21) which adjoins the first-mentioned region (8; 17; 22), thereby to diffuse said impurity in a plane direction into said desired region (9;18; 21).
Claim 3
Dependent Claim
31 words
The method of claim 1, characterized in that said region (8; 17; 22) containing said impurity and said desired region (9; 18; 21) are formed on an insulating film (4, 14).
Claim 4
Dependent Claim
27 words
The method of claim 1, characterized in that said region containing said impurity and said desired region are formed in a surface region of a semiconductor substrate.
Claim 5
Dependent Claim
22 words
The method of claim 1 or 2, characterized in that said semiconductor device is a metal-insulator-semiconductor field effect transistor or a resistor.
References Cited (Backward Citations)
No citation records indexed.
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