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EP0025872A2
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EP
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Semiconductor component part for the conversion of solar rays into electrical energy
Assignee: Total Energie Developpement and Messerschmitt-Boelko
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Filing: 1980-08-19
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Granted: —
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Expires: 2000-08-19
Abstract
Abstract Translated from German Halbleiterbauelement für die Umsetzung von Licht in elektrische Energie mit mindestens einer Schicht amorphen Siliziums, wobei die dem Lichteinfall ausgesetzte Oberfläche des amorphen Siliziums eine Deckschicht (11, 23, 111) aus polykristallinem Silizium aufweist. Semiconductor component for converting light into electrical energy with at least one layer of amorphous silicon, the surface of the amorphous silicon exposed to the light having a cover layer (11, 23, 111) made of polycrystalline silicon.
Inventors
- 👤 Gerhard Dr. Winterling
- 👤 Max Dr. Königer
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 20:36
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F10/00; H10F10/10; H10F10/17; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
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